Results 61 to 70 of about 20,042,377 (298)

Printed Integrated Logic Circuits Based on Chitosan‐Gated Organic Transistors for Future Edible Systems

open access: yesAdvanced Functional Materials, EarlyView.
Edible electronics needs integrated logic circuits for computation and control. This work presents a potentially edible printed chitosan‐gated transistor with a design optimized for integration in circuits. Its implementation in integrated logic gates and circuits operating at low voltage (0.7 V) is demonstrated, as well as the compatibility with an ...
Giulia Coco   +8 more
wiley   +1 more source

Simultaneous improvement of magnetic-field-induced working temperature and mechanical properties in Ni–Mn–In shape memory alloy

open access: yesAIP Advances, 2022
Ni–Mn–In magnetic shape memory alloys, which can be stimulated by an external magnetic field, exhibit a fast response and have aroused wide attention in the field of electro-mechanical actuators.
Tianyou Ma   +8 more
doaj   +1 more source

Intermediate Resistive State in Wafer‐Scale Vertical MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications

open access: yesAdvanced Functional Materials, EarlyView.
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa   +19 more
wiley   +1 more source

Designing a New Ni-Mn-Sn Ferromagnetic Shape Memory Alloy with Excellent Performance by Cu Addition

open access: yesMetals, 2018
Both magnetic-field-induced reverse martensitic transformation (MFIRMT) and a high working temperature are crucial for the application of Ni-Mn-Sn magnetic shape memory alloys.
Kun Zhang   +5 more
doaj   +1 more source

A constitutive model for cyclic actuation of high-temperature shape memory alloys [PDF]

open access: yes, 2014
In this work, a three dimensional constitutive model for High Temperature Shape Memory Alloys (HTSMAs) is presented. To describe the evolution of the cyclic actuation behavior of such alloys, viscoplastic mechanisms and transformation induced plasticity ...
CHEMISKY, Yves   +4 more
core   +1 more source

Integration of Low‐Voltage Nanoscale MoS2 Memristors on CMOS Microchips

open access: yesAdvanced Functional Materials, EarlyView.
This article presents the first monolithic integration of nanoscale MoS2‐based memristors into the back‐end‐of‐line of foundry‐fabricated CMOS microchips in a one‐transistor‐one‐resistor (1T1R) architecture. The MoS2‐based 1T1R cells exhibit forming‐free, nonvolatile resistive switching with ultra‐low operating voltages, low cycle‐to‐cycle variability ...
Jimin Lee   +16 more
wiley   +1 more source

Analysis of the Composite Transmission of Magnetorheological Fluids and Shape Memory Alloy

open access: yesJixie chuandong, 2015
The magnetorheological effect of magnetorheological fluid reduce under a high temperature condition,which causes so many problems like the uncontrollability of the variation of shearing stress,and even failure of the transmission device.Based on the ...
Chen Song   +3 more
doaj  

Functional fatigue in NiTi shape memory alloy wires - A comparative study [PDF]

open access: yes, 2012
The functional fatigue behaviour of two near equi-atomic NiTi shape memory alloy wires obtained from different sources were evaluated. Results showed that though the wires had similar transformation temperatures and mechanical properties, their ...
Ramaiah, KV   +3 more
core  

Thermal-Mechanical Properties of Polyurethane-Clay Shape Memory Polymer Nanocomposites [PDF]

open access: yes, 2010
Shape memory nanocomposites of polyurethane (PU)-clay were fabricated by melt mixing of PU and nano-clay. Based on nano-indentation and microhardness tests, the strength of the nanocomposites increased dramatically as a function of clay content, which is
Kraft, Arno,   +21 more
core   +2 more sources

Optoelectronic Synaptic Devices Using Molecular Telluride Phase‐Change Inks for Three‐Factor Learning

open access: yesAdvanced Functional Materials, EarlyView.
Optoelectronic synaptic devices based on solution‐processed molecular telluride GST‐225 phase‐change inks are demonstrated for three‐factor learning. A global optical signal broadcast through a silicon waveguide induces non‐volatile conductance updates exclusively in locally electrically flagged memristors.
Kevin Portner   +14 more
wiley   +1 more source

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