Results 101 to 110 of about 95,883 (258)

Oxygen Vacancies Driven Photoconductivity in Layered Cobaltite Epitaxial Films

Advanced Electronic Materials, EarlyView.
ABSTRACT Understanding photoinduced phenomena in complex oxides is crucial for developing next‐generation optoelectronic devices. Here, we report pronounced ultraviolet (UV) light‐induced photoconductivity in epitaxial PrBa1‐xCaxCo2O5+δ (x = 0.5) thin films grown on (001) LSAT substrates via pulsed laser deposition.
Yanbin Chen, Yiqun Liu, Xing Xu, Jing Ma, Ce‐wen Nan, Chonglin Chen   +5 more
wiley   +1 more source

Atomically Modulating Competing Exchange Interactions in Centrosymmetric Skyrmion Hosts GdRu2X2 (X = Si and Ge)

Advanced Electronic Materials, EarlyView.
Our work bridges the gap between skyrmion discovery and material design by demonstrating how atomic‐scale control of exchange interactions enables tunable skyrmion phase transitions in centrosymmetric magnetic metals. ABSTRACT Magnetic skyrmions are topologically protected spin states that hold promise for shaping the future of electronics.
Dasuni N. Rathnaweera, Xudong Huai, K. Ramesh Kumar, Michał J. Winiarski, Tomasz Klimczuk, Allana G. Iwanicki, Satya K. Kushwaha, Martin Mourigal, Tyrel M. McQueen, Thao T. Tran   +9 more
wiley   +1 more source

Superconducting TaH5 at high pressure

New Journal of Physics, 2019
Recently, the significant development, in the field of high-temperature superconductivity among the compressed elements hydrides (such as LaH _10 ), opens up a door in pursuing room-temperature superconductors.
Hefei Li, Xue Li, Hui Wang, Guangtao Liu, Yinwei Li, Hanyu Liu   +5 more
doaj   +1 more source

Uranium Doped Gallium Nitride Epitaxial Thin Films

Advanced Electronic Materials, EarlyView.
Uranium was controllably added to gallium nitride using molecular beam epitaxy. The uranium atoms segregated into vertically oriented regions with higher doping levels. Concentrations up to a few percent were achieved without showing significant degradation in the crystalline quality or optical characteristics. Low electrical resistivity was maintained
J. Pierce Fix, Sabin Regmi, Aaron G. Penders, Sohail Shah, Kevin D. Vallejo, Volodymyr B. Buturlim, Belief Rifore, Krzysztof Gofryk, Mukesh Bachhav, Nicholas J. Borys, Brelon J. May   +10 more
wiley   +1 more source

Emergence of Double‐Dome Superconductivity in the Pressurized Dirac Semimetal BaMg2Bi2

Advanced Electronic Materials, EarlyView.
ABSTRACT Dirac semimetal BaMg2${\rm BaMg}_{2}$Bi2${\rm Bi}_{2}$ is reported to be a unique topological material that manifests surface superconductivity that coexists with bulk band topology at ambient pressure. Here, we present a comprehensive investigation of high‐pressure superconducting properties in BaMg2${\rm BaMg}_{2}$Bi2${\rm Bi}_{2}$ single ...
Qi Wang, Juefei Wu, Cuiying Pei, Yi Zhao, Yiyan Wang, Yanpeng Qi   +5 more
wiley   +1 more source

Flat-band ratio and quantum metric in the superconductivity of modified Lieb lattices

Communications Physics
Flat bands may offer a route to high critical temperatures of superconductivity. It has been predicted that the quantum geometry of the bands as well as the ratio of the number of flat bands to the number of orbitals determine flat band superconductivity.
Reko P. S. Penttilä, Kukka-Emilia Huhtinen, Päivi Törmä   +2 more
doaj   +1 more source

Realizing High-Temperature Superconductivity in Borophene with Dirac States Assembled by Kagome and Honeycomb Boron Layers

, 2023
Yiming Zhang, Xuanhao Yuan, Meiling Xu, Jian Hao, Yinwei Li   +4 more
openalex   +1 more source

Topological Materials and Related Applications

Advanced Electronic Materials, EarlyView.
This review covers topological materials—including topological insulators, quantum valley Hall and quantum spin Hall insulators, and topological Weyl and Dirac semimetals—as well as their most recent advancements in fields such as spintronics, electronics, photonics, thermoelectrics, and catalysis.
Carlo Grazianetti, Roberto Mantovan, Emanuele Longo, Harold J. W. Zandvliet, Pantelis Bampoulis, Yu Pan, Fan Li, Xia Wang, Payton Downey, Alessandro Molle   +9 more
wiley   +1 more source

Electric Field‐Induced Hole‐ and Electron‐Type Flat Bands in Twisted Double Bilayer Graphene

Advanced Electronic Materials, EarlyView.
The electronic structure of twisted double bilayer graphene is visualized using angle‐resolved photoemission spectroscopy with micrometer spatial resolution at twists of 3.1∘$^\circ$ and 6.0∘$^\circ$ as a function of gate voltage. Tunable hybridization effects and flat band formation occurs between valence and conduction band states due to a finite ...
Zhihao Jiang, Dongkyu Lee, Alfred J. H. Jones, Youngju Park, Paulina Majchrzak, Kimberly Hsieh, Chakradhar Sahoo, Thomas S. Nielsen, Kenji Watanabe, Takashi Taniguchi, Philip Hofmann, Yong P. Chen, Jeil Jung, Søren Ulstrup   +13 more
wiley   +1 more source

Band Gap Tuneability in Antiperovskite‐Based Nitrides AE3PnN and Imides AE5Pn2(NH)2 (AE = Ca, Sr; Pn = As, Sb, Bi)

Angewandte Chemie, Volume 138, Issue 20, 11 May 2026.
A series of imide‐based defect antiperovskites AE5Pn2(NH)2 (AE = Ca, Sr; Pn = As, Sb, Bi) has been synthesized using the ammonothermal method. DFT calculations and spectroscopy revealed direct band gaps suitable for photovoltaic absorber materials. The discovered compounds can further be used as precursors for the synthesis of AE3PnN antiperovskites as
Thanh G. Chau, Florian Wolf, Dan Han, Saloni, Teak D. Boyko, Stefan S. Rudel, Thomas Bein, Hubert Ebert, Alexander Moewes, Wolfgang Schnick   +9 more
wiley   +2 more sources