Results 211 to 220 of about 137,232 (346)

High Entropy Wide‐Bandgap Borates with Broadband Luminescence and Large Nonlinear Optical properties

open access: yesAdvanced Functional Materials, EarlyView.
High‐entropy rare‐earth borates exhibit excellent nonlinear optical and broadband luminescence properties arising from multi‐component doping, chemical disorder, increased configurational entropy, and increased lattice and electronic anharmonicity. This formulation enabled us to obtain a large, environmentally stable single crystal with 3X higher laser‐
Saugata Sarker   +14 more
wiley   +1 more source

Selective Separation of the Rare Earth Elements Dysprosium and Neodymium via Tailoring Nanocellulose Chemical Structure

open access: yesAdvanced Functional Materials, EarlyView.
Dicarboxylate‐modified anionic hairy cellulose nanocrystals exhibit a high selectivity for dysprosium(III) over neodymium(III). This selectivity arises from disordered dicarboxylate cellulose “hairs” that enable cooperative ionic coordination, hydrogen bonding, and strain‐induced conformational shrinkage.
Roya Koshani   +6 more
wiley   +1 more source

Dual‐Interface‐Dominant Cathode Architectures Enabling Fast Sulfur Redox and Stable Interfaces in All‐Solid‐State Li‐S Batteries

open access: yesAdvanced Functional Materials, EarlyView.
An optimized carbon host nanostructure enables a dual‐interface‐dominant architecture in sulfur cathodes of solid‐state Li‐S batteries by selectively forming sulfur|carbon and sulfur|solid electrolyte interfaces. This tailored interfacial configuration accelerates sulfur redox kinetics by establishing enriched Li+/e– transport networks, while ...
Zhao Yang   +13 more
wiley   +1 more source

Magnetism and Nonlinear Charge Transport in NiFe2O4/γ‐Al2O3/SrTiO3 Heterostructure: Toward Spintronic Applications

open access: yesAdvanced Functional Materials, EarlyView.
In this report, we demonstrate that a crystalline phase of 52nm thick NiFe2O4 can be grown by RF sputtering on top of γ‐Al2O3(8nm)/SrTiO3 at a significantly low temperature (150 °C) without compromising the mobility and carrier density of the 2D electron gas at the γ‐Al2O3(8nm)/SrTiO3 interface.
Amit Chanda   +11 more
wiley   +1 more source

Intermediate Resistive State in Wafer‐Scale Vertical MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications

open access: yesAdvanced Functional Materials, EarlyView.
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa   +19 more
wiley   +1 more source

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