Results 231 to 240 of about 137,232 (346)

Scalable Polyelectrolyte Complex‐Based Sorbent With Hourly Sorption−Desorption Cycles for Multicyclic Atmospheric Water Harvesting in Arid Environments

open access: yesAdvanced Functional Materials, EarlyView.
A polyelectrolyte complex‐based sorbent is produced by scalable, environmentally benign aqueous phase inversion. Its porous, LiCl‐ and GO‐integrated architecture enables hourly adsorption−desorption cycles at low relative humidity (RH < 30%). A large‐scale prototype achieves multicyclic, solar‐driven atmospheric water harvesting of 1.37 L kg−1 day−1 ...
Seung‐Hwan Oh   +3 more
wiley   +1 more source

Effects of Clenching Strength on Step Reaction Time. [PDF]

open access: yesJ Funct Morphol Kinesiol
Sugai N   +8 more
europepmc   +1 more source

Biomaterials‐Based Hydrogel with Superior Bio‐Mimetic Ionic Conductivity and Tissue‐Matching Softness for Bioelectronics

open access: yesAdvanced Functional Materials, EarlyView.
By mimicking the ion‐accelerating effect of ion channel receptors in neuron membranes, a biomaterials‐based ionic hydrogel (BIH) is developed, which offers a high ionic conductivity of 7.04 S m−1, outperforming conventional chitosan, cellulose, agarose, starch, and gelatin based ionic hydrogels.
Baojin Chen   +7 more
wiley   +1 more source

Indirect Band Edge and Chain‐Locked Linear Dichroism in the Quasi‐1D Van der Waals Antiferromagnet AgCrP2S6

open access: yesAdvanced Functional Materials, EarlyView.
AgCrP2S6 reveals a momentum‐indirect band edge (≈1.35 eV) and chain‐locked linear dichroism: the first direct transitions emerge at 1.6–1.8 eV for E||a. Resonant Raman and photoemission corroborate this assignment. In ACPS/graphene heterostructures, photocurrent turns on above ≈1.5 eV and follows the same polarization selection rules (anisotropy ≈0.53),
Oleksandr Volochanskyi   +9 more
wiley   +1 more source

Integration of Low‐Voltage Nanoscale MoS2 Memristors on CMOS Microchips

open access: yesAdvanced Functional Materials, EarlyView.
This article presents the first monolithic integration of nanoscale MoS2‐based memristors into the back‐end‐of‐line of foundry‐fabricated CMOS microchips in a one‐transistor‐one‐resistor (1T1R) architecture. The MoS2‐based 1T1R cells exhibit forming‐free, nonvolatile resistive switching with ultra‐low operating voltages, low cycle‐to‐cycle variability ...
Jimin Lee   +16 more
wiley   +1 more source

A New Threshold Switching Device With Tunable Negative Differential Resistance Based on ErMnO3 Polymorphs

open access: yesAdvanced Functional Materials, EarlyView.
Polymorph engineering in ErMnO3 enables low‐voltage, forming‐free threshold switching with tunable negative differential resistance. Conducting orthorhombic regions embedded in an insulating hexagonal matrix provide controlled Joule‐heating‐enhanced Poole–Frenkel transport. The hexagonal phase prevents excessive heating and breakdown.
Rong Wu   +8 more
wiley   +1 more source

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