Results 221 to 230 of about 1,164,630 (312)
High-Temperature Oxidation and Phase Stability of AlCrCoFeNi High Entropy Alloy: Insights from In Situ HT-XRD and Thermodynamic Calculations. [PDF]
Arshad M +5 more
europepmc +1 more source
MXene dervied CoFe composites show increased initial Oxygen Evolution Reaction (OER) activity compared to the pure CoFe and MXene in an Anion Exchange Membrane device. Vanadium vacancies in the MXene plays a role in increased OER activity and hinders Fe leaching in the AEM device over using the pure V2C MXene as a support material for the CoFe ...
Can Kaplan +16 more
wiley +1 more source
The Effect of Cr Addition on the Strength and High Temperature Oxidation Resistance of Y2O3 Dispersion Strengthened Mo Composites. [PDF]
Guan H +5 more
europepmc +1 more source
High-Temperature Oxidation Behavior of Fe-1Cr-0.2Si Steel. [PDF]
Hao M, Sun B, Wang H.
europepmc +1 more source
A self‐sustaining solar photoelectrochemical cell (SS‐PEC) is developed to recover uranium from aqueous UO22+ with concurrent organic oxidation and electricity production. The monolithical photoanode directly captures electrons from organic compounds, leading to the oxidation of organic compounds and the decomposition of uranium‐organic complexes ...
Yumei Wang +7 more
wiley +1 more source
Exploring the Influence of Nanocrystalline Structure and Aluminum Content on High-Temperature Oxidation Behavior of Fe-Cr-Al Alloys. [PDF]
Kumar R +4 more
europepmc +1 more source
Hollow poly(heptazine imide) spheres are prepared through a novel approach that integrates hard templating with ionothermal synthesis. This method enables precise control over surface area, pore volume, hydrophilicity, light absorption, band position, and metal composition. These tunable properties facilitate the customized design of semiconductors for
Lingli Ni +10 more
wiley +1 more source
An all‐in‐one analog AI accelerator is presented, enabling on‐chip training, weight retention, and long‐term inference acceleration. It leverages a BEOL‐integrated CMO/HfOx ReRAM array with low‐voltage operation (<1.5 V), multi‐bit capability over 32 states, low programming noise (10 nS), and near‐ideal weight transfer.
Donato Francesco Falcone +11 more
wiley +1 more source

