Results 81 to 90 of about 72,792 (298)
Rc-Embedded Ldmos-Scr With High Holding Current For High-Voltage I/O Esd Protection
, 2015 A novel lateral diffusion MOS-embedded silicon-controlled rectifier with a high holding current (LDMOS-SCR-HHC) is proposed and verified in a 0.25-μ m 18-V Bipolar-CMOS-DMOS process. By adding an imbedded P+ region located next to the source region of an
Gu, Xiaofeng +3 more
core +1 more source
FEBS Letters, EarlyView.We reconstituted Synechocystis glycogen synthesis in vitro from purified enzymes and showed that two GlgA isoenzymes produce glycogen with different architectures: GlgA1 yields denser, highly branched glycogen, whereas GlgA2 synthesizes longer, less‐branched chains.
Kenric Lee +3 more
wiley +1 more source
FEBS Letters, EarlyView.Structural and biochemical characterisations show that the planar cell polarity (PCP) protein Inturned harbours a unique PDZ‐like domain that does not bind canonical PDZ‐binding motifs (PBMs) like that of another PCP protein Vangl2. In contrast, the apical‐basal polarity protein Scribble contains four PDZ domains that bind Vangl2, but one PDZ domain ...
Stephan Wilmes +4 more
wiley +1 more source
, 1990 Sodium channel activations, measured as the fraction of channels open to peak conductance for different test potentials (F[V]), shows two statistically different slopes from holding potential more positive than -90 mV. A high valence of 4–6e is indicated
Ruben, P.C., Rayner, M.D., Starkus, J.G.
core +1 more source
Tau acetylation at K331 has limited impact on tau pathology in vivo
FEBS Letters, EarlyView.We mapped tau post‐translational modifications in humanized MAPT knock‐in mice and in amyloid‐bearing double knock‐in mice. Acetylation within the repeat domain, particularly around K331, showed modest increases under amyloid pathology. To test functional relevance, we generated MAPTK331Q knock‐in mice.
Shoko Hashimoto +3 more
wiley +1 more source
Dynamic Modulation of OECT‐Based Inverters for In Situ Electrophysiological Monitoring
Advanced ScienceOrganic electrochemical transistors (OECTs) and their related circuits have emerged as a promising platform for biosensors and neuromorphic electronics, benefiting from their sub‐1 V operation voltage, flexibility, biocompatibility, etc.
Guohong Hu +7 more
doaj +1 more source
Zero-current Zero-voltage Transition Pwm Converters With Magnetically Coupled Auxiliary Circuit
Eletrônica de Potência, 2008 This paper presents a novel methodology to synthesize Zero-Current Zero-Voltage Transition (ZCZVT) topologies. The proposed methodology is based on the Auxiliary Voltage Source (AVS) concept, which permits extend the proposed new circuits to an entire ...
Mário L. da S. Martins +3 more
doaj +1 more source
The design of high holding voltage SCR for whole-chip ESD protection
IEICE Electronics Express, 2008 In this paper, we have investigated the electrical characteristics of Silicon Controlled Rectifier (SCR)-based ESD power clamp circuit with high holding voltage for whole-chip ESD protection. The proposed ESD power clamp circuit (HHVSCR: High Holding Voltage SCR) has different well (n/p-well) length (3/7µm - 8/2µm) and p-drift (p+) length (8µm - 16µm).
Koo, Yong-Seo +3 more
openaire +1 more source
Structural insights into an engineered feruloyl esterase with improved MHET degrading properties
FEBS Letters, EarlyView.A feruloyl esterase was engineered to mimic key features of MHETase, enhancing the degradation of PET oligomers. Structural and computational analysis reveal how a point mutation stabilizes the active site and reshapes the binding cleft, expading substrate scope.
Panagiota Karampa +5 more
wiley +1 more source
Silicon-Controlled Rectifier Stacking Structure for High-Voltage ESD Protection Applications
, 2010 Latchup immunity is a challenging issue for the design of power supply clamps used in high-voltage electrostatic discharge (ESD) protection applications. While silicon-controlled rectifiers (SCRs) are highly robust ESD devices, they are traditionally not
null Zhiwei Liu +7 more
core +2 more sources