Results 51 to 60 of about 278,751 (295)

Exciton Condensation and Perfect Coulomb Drag [PDF]

open access: yes, 2012
Coulomb drag is a process whereby the repulsive interactions between electrons in spatially separated conductors enable a current flowing in one of the conductors to induce a voltage drop in the other. If the second conductor is part of a closed circuit,
A. D. K. Finck   +31 more
core   +2 more sources

Photovoltaic devices with a PEDOT:PSS:WOx hole transport layer

open access: yesRSC Advances, 2014
In this paper, we report a significantly improved fill factor (FF) of inverted poly(3-hexylthiophene) (P3HT) and indene-C60 bisadduct (ICBA) organic photovoltaic devices via surface modification. The influence of the poly(3,4-ethylenedioxythiophene):poly(styrene-sulfonate) (PEDOT:PSS) hole extraction layer (HEL) modified with tungsten oxide (WOx) on ...
Seung Joo Lee   +2 more
openaire   +1 more source

Thermoreflectance Detection of Point Defects Resulting from Focused Ion Beam Milling

open access: yesAdvanced Engineering Materials, EarlyView.
Focused ion beam (FIB) milling is a common tool for nanoscale material processing, however irradiation damage, redeposition, and contamination can occur. We use several characterization tools to show FIB‐induced effects beyond 1 mm from the milled area.
Thomas W. Pfeifer   +3 more
wiley   +1 more source

Layer-Resolved Ultrafast XUV Measurement of Hole Transport in a Ni-TiO2-Si Photoanode [PDF]

open access: yes, 2019
Metal-oxide-semiconductor junctions are central to most electronic and optoelectronic devices. Here, the element-specificity of broadband extreme ultraviolet (XUV) ultrafast pulses is used to measure the charge transport and recombination kinetics in ...
Cushing, Scott K.   +7 more
core   +3 more sources

Parallel electron-hole bilayer conductivity from electronic interface reconstruction [PDF]

open access: yes, 2010
The perovskite SrTiO$_3$-LaAlO$_3$ structure has advanced to a model system to investigate the rich electronic phenomena arising at polar interfaces. Using first principles calculations and transport measurements we demonstrate that an additional SrTiO ...
A. Brinkman   +15 more
core   +3 more sources

Experimental Evaluation of 100Cr6 Steel Microindented Surfaces Under Lubricated Nonconformal Point Contacts

open access: yesAdvanced Engineering Materials, EarlyView.
The tribological behavior of 100Cr6 steel spheres textured via Vickers microindentation is evaluated under lubricated sliding by varying both dimple size and density. Fine and dense textures significantly reduce friction across all lubrication regimes, while large dimples increase it.
Farideh Davoodi   +3 more
wiley   +1 more source

Inverted device architecture for high efficiency single-layer organic light-emitting diodes with imbalanced charge transport

open access: yesNature Communications
Many wide-gap organic semiconductors exhibit imbalanced electron and hole transport, therefore efficient organic light-emitting diodes require a multilayer architecture of electron- and hole-transport materials to confine charge recombination to the ...
Xiao Tan   +9 more
doaj   +1 more source

A Solution-Processed Tetra-Alkoxylated Zinc Phthalocyanine as Hole Transporting Material for Emerging Photovoltaic Technologies

open access: yesInternational Journal of Photoenergy, 2018
A tetra-n-butoxy zinc phthalocyanine (n-BuO)4ZnPc has been synthesized in a single step, starting from commercial precursors, and easily purified. The molecule can be solution processed to form an effective and inexpensive hole transport layer for ...
Gloria Zanotti   +9 more
doaj   +1 more source

Frictional Drag between Two Dilute Two-Dimensional Hole Layers

open access: yes, 2002
We report drag measurements on dilute double layer two-dimensional hole systems in the regime of r_s=19~39. We observed a strong enhancement of the drag over the simple Boltzmann calculations of Coulomb interaction, and deviations from the T^2 dependence
A. G. Rojo   +23 more
core   +1 more source

Issues on the molecular-beam epitaxial growth of p-SiGe inverted-modulation-doped structures [PDF]

open access: yes, 1999
The influence of boron segregation and silicon cap-layer thickness on two-dimensional hole gases (2-DHGs) has been investigated in Si/Si0.8Ge0.2/Si inverted-modulation-doped heterostructures grown by solid-source molecular-beam epitaxy. Boron segregation,
Parker, Evan H. C.   +4 more
core   +1 more source

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