Results 161 to 170 of about 161,416 (236)

Dual Bipolar Resistive Switching in Wafer‐Scalable 2D Perovskite Oxide Nanosheets‐Based Memristor

open access: yesAdvanced Science, EarlyView.
A wafer‐scalable memristor based on 2D Sr2Nb3O₁₀ perovskite oxide nanosheets exhibits dual bipolar resistive switching through controllable oxygen ion migration and redox reactions. This single device enables both STDP and anti‐STDP synaptic functions, achieving 86.4% MNIST accuracy in supervised spiking neural networks, offering a compact, energy ...
Sohwi Kim   +11 more
wiley   +1 more source

Information and Communication Technology Use Among Social Ties of Varying Strength: Who Benefits and How? [PDF]

open access: yesGerontologist
Francis-Levin J   +5 more
europepmc   +1 more source

Dissolution Study of Biodegradable Magnesium Silicide Thin Films for Transient Electronic Applications

open access: yesAdvanced Science, EarlyView.
Magnesium silicide (Mg2Si) is introduced as a narrow‐bandgap, biodegradable semiconductor for transient electronics. RF‐sputtered and annealed Mg2Si thin films show high intrinsic electrical conductivity and low thermal conductivity. The polycrystalline material undergoes hydrolysis in aquatic and composting environments with minimal cytotoxicity ...
Ji‐Woo Gu   +17 more
wiley   +1 more source

Mechanical Stimuli‐Induced Manipulation of Malignant Behavior in Bioprinted Cancer Microtissues via PI3K/NF‐κB Activation

open access: yesAdvanced Science, EarlyView.
A mechanically tunable ECM platform is created by integrating dECM–alginate matrices with in‐bath tumor printing. The mechanically tunable ECM environment drives tumors to acquire hypoxia, mechanotransduction signaling, metastatic traits, and drug‐resistant phenotypes that collectively promote malignant transformation.
Seok‐Hyeon Lee   +8 more
wiley   +1 more source

Large Anomalous Hall Effect, Non‐Vanishing Berry Curvature in (110) FeRh Antiferromagnet Films via Interface Strain

open access: yesAdvanced Science, EarlyView.
This study demonstrates a strain‐tunable anomalous Hall response in the (110)‐oriented FeRh thin film. First‐principles calculations reveal that strain‐induced symmetry lowering redistributes Berry curvature near the Fermi level via band shifts and avoided crossings.
Yun‐Ho Kim   +11 more
wiley   +1 more source

Noise Fingerprints as a Quantitative Order Parameter for Polarization‐ and Defect‐Mediated Switching in Hafnia Ferroelectrics

open access: yesAdvanced Science, EarlyView.
Low‐frequency noise fingerprints in hafnia ferroelectrics provide a quantitative handle to resolve the long‐standing debate between polarization‐mediated and defect‐mediated switching. By tuning oxygen vacancy density via ALD O3 dose time and applying a physically constrained deconvolution, we extract bias‐resolved current fractions for both mechanisms
Ryun‐Han Koo   +8 more
wiley   +1 more source

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