Results 231 to 240 of about 12,622 (259)
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High Power Insulated Gate Bipolar Transistors (IGBTs)
Extended Abstracts of the 1988 International Conference on Solid State Devices and Materials, 1988H. Ohashi, A. Nakagawa, M. Hideshima
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Series connection of insulated gate bipolar transistors (IGBTs)
2005 European Conference on Power Electronics and Applications, 2005R. Withanage, N. Shammas, S. Tennakoon
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An organic electrochemical transistor for multi-modal sensing, memory and processing
Nature Electronics, 2023, , Tao Li
exaly
Wafer-scale monolithic integration of full-colour micro-LED display using MoS2 transistor
Nature Nanotechnology, 2022Luhing Hu, Anh Tuan Hoang, Jong-Hyun Ahn
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The future of ferroelectric field-effect transistor technology
Nature Electronics, 2020Asif Khan, Ali Keshavarzi, Suman Datta
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An organic transistor with light intensity-dependent active photoadaptation
Nature Electronics, 2021Fengjiao Zhang, Chong-an Di
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An elastic and reconfigurable synaptic transistor based on a stretchable bilayer semiconductor
Nature Electronics, 2022Faheem Ershad +2 more
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Moiré synaptic transistor with room-temperature neuromorphic functionality
Nature, 2023Xiaodong Yan, Vinod K Sangwan
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Investigations on ageing of IGBT transistors under repetitive short-circuits operations
2009In this paper, we describe experimental results concerning the ageing of 600 V IGBT under repetitive short circuit conditions. A critical energy, which is dependent on test conditions, has been already pointed out which separates two failure modes. The first one, with a cumulative degradation effect, requires some 104 short circuits to reach failure ...
Berkani, Mounira +3 more
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