Results 11 to 20 of about 6,740,764 (263)

Porous II‐VI vs. porous III‐V semiconductors [PDF]

open access: yes, 2010
Access full text - https://doi.org/10.1002/pssc.201000102In this work a morphological comparison of porous structures obtained by means of electrochemical etching in II-VI (ZnSe, CdSe) and III-V (InP, GaAs, GaP) semiconductors is presented.
LANGA, S.   +7 more
core   +1 more source

Recent advances on fluorescent biomarkers of near-infrared quantum dots for in vitro and in vivo imaging

open access: yesScience and Technology of Advanced Materials, 2019
Luminescence probe has been broadly used for bio-imaging applications. Among them, near-infrared (NIR) quantum dots (QDs) are more attractive due to minimal tissue absorbance and larger penetration depth.
Shanmugavel Chinnathambi   +1 more
doaj   +1 more source

Preparation of Polycrystalline CdTe Films by Annealing of Amorphous Films Electrodeposited from Ammoniacal Alkaline Baths

open access: yesHigh Temperature Materials and Processes, 2012
A new route to prepare polycrystalline CdTe films using electrodeposition of amorphous Cd-Te films and subsequent annealing was investigated. Amorphous Cd-Te films with Te-rich compositions could be electrodeposited from ammoniacal alkaline aqueous ...
Miyake Masao   +2 more
doaj   +1 more source

Pulsed Laser Deposited Nickel Doped Zinc Oxide Thin Films: Structural and Optical Investigations [PDF]

open access: yesЖурнал нано- та електронної фізики, 2013
Structural and optical studies has been done on Nickel doped Zinc Oxide (NixZn1 – xO, x  0.03, 0.05 and 0.07 by weight) thin films prepared by pulsed laser deposition technique.
Tanveer A. Dar   +2 more
doaj  

Contribution to the study of electronic structure of crystalline semiconductors (Si, Ge, GaAs, Gap, ZnTe, ZnSe)

open access: yesEPJ Web of Conferences, 2012
The band structure of semiconductors was described by several theorists since the Fifties. The main objective of the present paper is to do a comparative study between various families of semi-conductors IV (Si,Ge), III-V (GaAs, GaP) and II-VI (ZnSe ...
Bouhafs B., Mahi N.
doaj   +1 more source

Design of I-II-IV-VI semiconductors through element substitution:The thermodynamic stability limit and chemical trend [PDF]

open access: yes, 2014
Through element substitution in CuZnSnS, a class of kesterite-structured I-II-IV-VI semiconductors can be designed as novel functional materials. Using the first-principles calculations, we show that this element-substitution design is thermodynamically ...
Xiang, H.-J.   +7 more
core   +1 more source

The thermo-electric nature of the Debye temperature

open access: yesAIP Advances, 2018
The Debye temperature is typically associated with the heat capacity of a solid and the cut-off of the possible lattice vibrations, but not necessarily to the electric conductivity of the material. By investigating III-V and II-VI compound semiconductors,
Mithun Bhowmick   +3 more
doaj   +1 more source

Numerical modelling of MOV with Voronoi network and finite element method

open access: yesHigh Voltage, 2021
The electrical and thermal characteristics of metal oxide varistor (MOV) are essential for the study of MOV performance and degradation. This paper provides a modelling method of MOV to simulate its microstructure geometry with the Voronoi network and ...
Qibin Zhou   +4 more
doaj   +1 more source

Higher-order topological insulator in cubic semiconductor quantum wells

open access: yesScientific Reports, 2021
The search for exotic new topological states of matter in widely accessible materials, for which the manufacturing process is mastered, is one of the major challenges of the current topological physics.
Sergey S. Krishtopenko
doaj   +1 more source

Synthesis of colloidal Zn(Te,Se) alloy quantum dots

open access: yesMaterials Research Express, 2017
Colloidal Zn(Te _1− _x Se _x ) quantum dots (QDs), which are highly mismatched semiconductor alloys, were synthesized by the hot injection of an organometallic solution, and the composition and size dependence of their optical gap were studied together ...
H Asano, K Arai, M Kita, T Omata
doaj   +1 more source

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