Results 1 to 10 of about 4,105 (266)

II-VI Semiconductor Interfaces

1989
We shall review recent T.E.M. results on II-VI semiconductor Molecular Beam Epitaxial growth. The emphasis will be put on the structure of interfaces in both high misfit systems such as (001)ZnTe, (001) CdTe and (111)CdTe on (001)GaAs substrates, and low misfit ones such as (001)CdTe on (001) Cd0.96Zn0.04Te. Quantum wells and superlattices such as CdTe/
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Luminescence of II-VI Semiconductor Nanoparticles

Solid State Phenomena, 2014
Nanoparticle or an ultrafine particle is a small solid whose physical dimension lies between 1 to 100 nanometers. Nanotechnology is the coming revolution in molecular engineering, and therefore, it is curiosity-driven and promising area of technology.
B.P. Chandra, V.K. Chandra, Piyush Jha
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β-NMR in II–VI semiconductors

Hyperfine Interactions, 2000
β-active probe nuclei are implanted in nominally undoped ZnSe crystals. β-radiation detected nuclear magnetic resonance (β-NMR) studies are described for two different probe nuclei, 8Li and 12B. This way, the implantation behavior of two “opposite”dopants, one acceptor (Li) and one donor (B) can be characterized by the same microscopic technique.
B. Ittermann, M. Füllgrabe, M. Heemeier, F. Kroll, F. Mai, K. Marbach, P. Meier, D. Peters, G. Welker, W. Geithner, S. Kappertz, S. Wilbert, R. Neugart, P. Lievens, U. Georg, M. Keim   +15 more
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Excitons in motion in II–VI semiconductors

physica status solidi (b), 2010
AbstractWe have shown recently that the magnetic properties of excitons change significantly as the excitons acquire kinetic energy. In particular, the exciton magnetic moments are enhanced considerably, whilst the diamagnetism decreases. The behaviour can be investigated through spectroscopic studies of excitons confined in quantum wells of large ...
J. J. Davies, L. C. Smith, D. Wolverson, V. P. Kochereshko, J. Cibert, H. Mariette, H. Boukari, M. Wiater, G. Karczewski, T. Wojtowicz, A. Gust, C. Kruse, D. Hommel   +12 more
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The Problem of Doping in II-VI Semiconductors

Annual Review of Materials Research, 1994
spectrum. In the late 1970's, the application of molecular beam epitaxy and metal organic vapor phase epitaxy to II-VI compounds greatly enhanced the growth of high quality and high purity crystals and stimu­ lated intensive new research into the properties of these materials. However, the problem of doping remained largely unsolved.
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Nanocrystals of II-VI Semiconductor Materials

MRS Proceedings, 1994
ABSTRACTCdS nanoclusters ranging in diameter between 1 and 4 nm were prepared in aqueous solution using aliphatic mercaptoalcohols as ligands. The photon energies of the Is Is absorption and the respective oscillator strengths are in accordance with size quantization theory.
Horst Weller, Tobias Vossmeyer, Alexander Eychmüller, Alf Mews, Lynne Katsikas, Gunter Reck   +5 more
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II – VI semiconductors come of age

Physics World, 1992
Long-distance fibre-optic communications, laser printers and compact disk players all depend on the same material and device technology – the semiconductor laser. These highly efficient sources are based on gallium arsenide (GaAs) and related III–V ("three–five") compounds.
Robert L Gunshor, Masakazu Kobayashi, Arto V Nurmikko   +2 more
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Applications of II–VI semimagnetic semiconductors

Journal of Alloys and Compounds, 2006
Abstract Selected possible applications of (Cd, Mn)Te, a classical wide-bandgap semimagnetic semiconductor, will be described. Both the semimagnetic character and the other physical properties of this material give rise to its wide applications. As a semimagnetic semiconductor (Cd, Mn)Te demonstrates “giant Faraday rotation” (of the direction of ...
A. Mycielski, L. Kowalczyk, R.R. Gałązka, Roman Sobolewski, D. Wang, A. Burger, M. Sowińska, M. Groza, P. Siffert, A. Szadkowski, B. Witkowska, W. Kaliszek   +11 more
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The Preparation of II–VI Semiconductor Nanomaterials

2014
This chapter discusses the origins of the organometallic synthesis of cadmium chalcogenide quantum dots, and the advances made subsequently, describing alternatives to metal alkyls and new solvent systems and how the chemistry was applied to other families of group II based semiconductors, such as zinc and mercury chalcogenides.
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Defects in epitaxial II-VI semiconductors [PDF]

, 1998
II-VI compounds find application in infra-red detectors, solid-state lasers and other optical devices. They are frequently produced as epitaxial layers on substrates of other materials. Crystalline defects in the layers affect their properties.
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