Results 21 to 30 of about 6,740,814 (308)
Numerical modelling of MOV with Voronoi network and finite element method
High Voltage, 2021 The electrical and thermal characteristics of metal oxide varistor (MOV) are essential for the study of MOV performance and degradation. This paper provides a modelling method of MOV to simulate its microstructure geometry with the Voronoi network and ...
Qibin Zhou +4 more
doaj +1 more source
Synthesis of colloidal Zn(Te,Se) alloy quantum dots
Materials Research Express, 2017 Colloidal Zn(Te _1− _x Se _x ) quantum dots (QDs), which are highly mismatched semiconductor alloys, were synthesized by the hot injection of an organometallic solution, and the composition and size dependence of their optical gap were studied together ...
H Asano, K Arai, M Kita, T Omata
doaj +1 more source
Higher-order topological insulator in cubic semiconductor quantum wells
Scientific Reports, 2021 The search for exotic new topological states of matter in widely accessible materials, for which the manufacturing process is mastered, is one of the major challenges of the current topological physics.
Sergey S. Krishtopenko
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Nanocrystalline alloys of II-VI semiconductors from molecular multilayer templates
, 2000 We present the synthesis and characterization of nanocrystalline II-VI semiconductors of mixed composition (CdSe/ZnSe, CdS) grown in fatty acid Langmuir-Schaefer multi-layer templates.
CRISTOFOLINI, Luigi +2 more
core +2 more sources
Effects of ZnO magnetron sputtering on surface charge and flashover voltage of oil-impregnated paper
High Voltage, 2019 With the aim of exploring an alternative method of nano-doping in cellulose paper and improving flashover strength of oil-impregnated paper, radio frequency (RF) magnetron sputtering method is introduced into the structural modification of insulating ...
Boxue Du +4 more
doaj +1 more source
Mechanism of Mn emission: Energy transfer vs charge transfer dynamics in Mn-doped quantum dots
APL Materials, 2020 In the quest for new functional materials, transition metal doping in semiconductors has attracted significant attention, wherein introduction of dopant atoms alters a range of physical properties of the host such as its optical, magnetic, and electronic
Pradeep K. R., Ranjani Viswanatha
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II–VI Semiconductor-Based Conductometric Gas Sensors: Is There a Future for These Sensors?
SensorsA review of the state of research in the development of conductometric gas sensors based on II–VI semiconductors is given. It was shown that II–VI compounds indeed have properties that are necessary for the development of highly efficient gas sensors. In
Ghenadii Korotcenkov
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Dislocation structures and motion in II–VI semiconductors
Physica B+C, 1983 Abstract Glide dislocations in CdS and CdTe have been studied by transmission electron microscopy, using the weak-beam technique. Dislocation glide planes, Burgers vectors and types (α or β) were identified. In both materials, both α and β dislocations were found to be dissociated, with dissociation widths corresponding to γ = 9.7±1.7 mJ m -2 (CdTe)
Lu, G, Cockayne, D
openaire +1 more source
Magnetic Properties of Ni-doped ZnO Nanocombs by CVD Approach
Nanoscale Research Letters, 2010 The search for above room temperature ferromagnetism in dilute magnetic semiconductors has been intense in recent year. Arrays of perpendicular ferromagnetic nanowire/rods have recently attracted considerable interest for their potential use in many ...
ShaoMin Zhou +7 more
doaj +1 more source
Advanced Engineering Materials, Volume 27, Issue 6, March 2025.ErB4 and NdB4 nanostructured powders are produced by mechanochemical synthesis. 5 h mechanical alloying and 4 M HCl acid leaching are used in the production. ErB4 and NdB4 powders exhibit maximum magnetization of 0.4726 emu g−1 accompanied with an antiferromagnetic‐to‐paramagnetic phase transition at about TN = 18 K and 0.132 emu g−1 with a maximum at ...
Burçak Boztemur +5 more
wiley +1 more source