Results 41 to 50 of about 4,105 (266)

Optical Properties of Pure and Eu Doped ZnSe Films Deposited by CSVS Technique [PDF]

Журнал нано- та електронної фізики, 2017
Pure (ZnSe) and europium doped (ZnSe:Eu) zinc selenide films were evaporated onto glass substrates using the close-spaced vacuum sublimation (CSVS) technique at different deposition conditions (substrate temperature).
M.M. Ivashchenko, A.S. Opanasyuk, I.P. Buryk, V.A. Lutsenko, A.V. Shevchenko   +4 more
doaj   +1 more source

Printed Integrated Logic Circuits Based on Chitosan‐Gated Organic Transistors for Future Edible Systems

Advanced Functional Materials, EarlyView.
Edible electronics needs integrated logic circuits for computation and control. This work presents a potentially edible printed chitosan‐gated transistor with a design optimized for integration in circuits. Its implementation in integrated logic gates and circuits operating at low voltage (0.7 V) is demonstrated, as well as the compatibility with an ...
Giulia Coco, Valerio Francesco Annese, Valerio Galli, Ilaria Penna, Debora Russo, Marina Veronesi, Rita Scarpelli, Stefania Sabella, Mario Caironi   +8 more
wiley   +1 more source

Physical Characteristics of Al/n-CdS Thin-Film Schottky Diode at High Temperatures

International Journal of Technology, 2014
Cadmium sulphide (CdS), a member of group II-VI semiconductors, is a promising material based on its applications. The present investigations describe the preparation and electrical characterization of CdS thin films.
A.A. AL hattami, E.A. Kadash, J.R. Rathod, H.S. Patel, K.D. Patel, V.M. Pathak   +5 more
doaj   +1 more source

Control of Polarization and Polar Helicity in BiFeO3 by Epitaxial Strain and Interfacial Chemistry

Advanced Functional Materials, EarlyView.
In BiFeO3 thin films, the interplay of interfacial chemistry, electrostatics, and epitaxial strain is engineered to stabilize homohelicity in polarization textures at the domain scale. The synergistic use of a Bi2O2‐terminated Aurivillius buffer layer and a highly anisotropic compressive epitaxial strain offers new routes to control the polar‐texture ...
Elzbieta Gradauskaite, Lilia Huynh, Natascha Gray, Quintin N. Meier, Marta D. Rossell, Morgan Trassin   +5 more
wiley   +1 more source

Intermediate Resistive State in Wafer‐Scale Vertical MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications

Advanced Functional Materials, EarlyView.
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa, Milan Buttberg, Ke Ran, Rana Walied Ahmad, Dennis Braun, Lukas Völkel, Jimin Lee, Sofía Cruces, Bart Macco, Bárbara Canto, Holger Lerch, Thorsten Wahlbrink, Holger Kalisch, Michael Heuken, Andrei Vescan, Joachim Mayer, Zhenxing Wang, Ilia Valov, Stephan Menzel, Max C. Lemme   +19 more
wiley   +1 more source

Structural Properties of Nickel Doped Cadmium Sulfide [PDF]

Журнал нано- та електронної фізики, 2011
In the Present work, conventional chemical co-precipitation method was employed for the preparation of Nickel (2, 4, 6, 8 and 10 at % of Ni) doped CdS nanoparticles.
B. Srinivasa Rao, B. Rajesh Kumar, G. Venkata Chalapathi, V. Rajagopal Reddy, T. Subba Rao   +4 more
doaj  

Recent Progress on Electrical and Optical Manipulations of Perovskite Photodetectors

Advanced Science, 2021
Photodetectors built from conventional bulk materials such as silicon, III–V or II–VI compound semiconductors are one of the most ubiquitous types of technology in use today.
Fang Wang, Xuming Zou, Mengjian Xu, Hao Wang, Hailu Wang, Huijun Guo, Jiaxiang Guo, Peng Wang, Meng Peng, Zhen Wang, Yang Wang, Jinshui Miao, Fansheng Chen, Jianlu Wang, Xiaoshuang Chen, Anlian Pan, Chongxin Shan, Lei Liao, Weida Hu   +18 more
doaj   +1 more source

Integration of Low‐Voltage Nanoscale MoS2 Memristors on CMOS Microchips

Advanced Functional Materials, EarlyView.
This article presents the first monolithic integration of nanoscale MoS2‐based memristors into the back‐end‐of‐line of foundry‐fabricated CMOS microchips in a one‐transistor‐one‐resistor (1T1R) architecture. The MoS2‐based 1T1R cells exhibit forming‐free, nonvolatile resistive switching with ultra‐low operating voltages, low cycle‐to‐cycle variability ...
Jimin Lee, Sofía Cruces, Xiaohua Liu, Yang Chen, Vasilis A. Maroufidis, Janghyun Jo, Lukas Völkel, Dennis Braun, Michael Möller, Leon Brackmann, Holger Kalisch, Michael Heuken, Andrei Vescan, Rafal E. Dunin‐Borkowski, Joachim Mayer, Stefan Wiefels, Max C. Lemme   +16 more
wiley   +1 more source

Ultrafast Phenomena in II-VI Semiconductors

Acta Physica Polonica A, 1998
We review studies on the coherent and incoherent exciton dynamics in ZnSe-based quantum wells. First, the exciton—exciton scattering parameter is determined from femtosecond four-wave mixing as a function of background exciton density generated by a prepulse.
Kalt, Heinz, Wachter, Sven, Lueerssen, Dietrich, Hoffmann, Jürgen   +3 more
openaire   +1 more source

Optoelectronic Synaptic Devices Using Molecular Telluride Phase‐Change Inks for Three‐Factor Learning

Advanced Functional Materials, EarlyView.
Optoelectronic synaptic devices based on solution‐processed molecular telluride GST‐225 phase‐change inks are demonstrated for three‐factor learning. A global optical signal broadcast through a silicon waveguide induces non‐volatile conductance updates exclusively in locally electrically flagged memristors.
Kevin Portner, Dhananjeya Kumaar, Giacomo Torti, Killian Keller, Till Zellweger, Florian M. Schenk, Christoph Weilenmann, Daniel Chelladurai, Vara Prasad Jonnalagadda, Ghazi Sarwat Syed, Vanessa Wood, Jürg Leuthold, Alexandros Emboras, Maksym Yarema, Mathieu Luisier   +14 more
wiley   +1 more source