Results 41 to 50 of about 6,740,814 (308)
, 2021 The nature of hydrogen defect centres in II-VI semiconductors has been inferred by studying implanted positive muons, used to mimic interstitial protons. Neutral paramagnetic centres formed by electron capture fall into three distinct categories.
Weidinger, A +14 more
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Advanced Engineering Materials, EarlyView.Gallium microalloying redirects interfacial reactions in low‐temperature Bi–Sn solders from Cu–Sn toward Cu–Ga intermetallic formation. The resulting Cu–Ga layer suppresses intermetallic growth during thermal aging, alters fracture pathways, and improves interfacial stability.
Iva Králová +6 more
wiley +1 more source
Structural Properties of Nickel Doped Cadmium Sulfide [PDF]
Журнал нано- та електронної фізики, 2011 In the Present work, conventional chemical co-precipitation method was employed for the preparation of Nickel (2, 4, 6, 8 and 10 at % of Ni) doped CdS nanoparticles.
B. Srinivasa Rao +4 more
doaj
Advanced Functional Materials, EarlyView.An all‐in‐one analog AI accelerator is presented, enabling on‐chip training, weight retention, and long‐term inference acceleration. It leverages a BEOL‐integrated CMO/HfOx ReRAM array with low‐voltage operation (<1.5 V), multi‐bit capability over 32 states, low programming noise (10 nS), and near‐ideal weight transfer.
Donato Francesco Falcone +11 more
wiley +1 more source
Advanced Functional Materials, EarlyView.Edible electronics needs integrated logic circuits for computation and control. This work presents a potentially edible printed chitosan‐gated transistor with a design optimized for integration in circuits. Its implementation in integrated logic gates and circuits operating at low voltage (0.7 V) is demonstrated, as well as the compatibility with an ...
Giulia Coco +8 more
wiley +1 more source
Control of Polarization and Polar Helicity in BiFeO3 by Epitaxial Strain and Interfacial Chemistry
Advanced Functional Materials, EarlyView.In BiFeO3 thin films, the interplay of interfacial chemistry, electrostatics, and epitaxial strain is engineered to stabilize homohelicity in polarization textures at the domain scale. The synergistic use of a Bi2O2‐terminated Aurivillius buffer layer and a highly anisotropic compressive epitaxial strain offers new routes to control the polar‐texture ...
Elzbieta Gradauskaite +5 more
wiley +1 more source
The Problem of Doping Wide Gap II-VI Compound Semiconductors and Its Solutions
, 1991 Wide gap II-VI compound semiconductors are difficult to be doped amphoterically. After more than thirty years of research in II-VI compound semiconductors, there does not even exist a satisfatory ...
W. I. Wang
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Electronics Letters, 2021 Thermal effect of semiconductor lasers is the biggest challenge to the development of semiconductor lasers. This problem limits the life and performance of high‐power laser diode. In this letter, we have reduced the thermal resistance of laser to enhance
Yuancheng Wang +4 more
doaj +1 more source
Advanced Functional Materials, EarlyView.In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa +19 more
wiley +1 more source
Ferromagnetic III–V and II–VI Semiconductors
, 2003 Recent years have witnessed extensive research aimed at developing functional, tetrahedrally coordinated ferromagnetic semiconductors that could combine the resources of semiconductor quantum structures and ferromagnetic materials systems and thus lay ...
Hideo Ohno, Tomasz Dietl
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