Results 31 to 40 of about 6,740,814 (308)

Exciton-Photon Interactions in Semiconductor Nanocrystals: Radiative Transitions, Non-Radiative Processes and Environment Effects

open access: yesApplied Sciences, 2021
In this review, we discuss several fundamental processes taking place in semiconductor nanocrystals (quantum dots (QDs)) when their electron subsystem interacts with electromagnetic (EM) radiation.
Vladimir A. Burdov   +1 more
doaj   +1 more source

Modular Critical Element Recycling Platform Using a Nanoporous Additively Manufactured Gyroid

open access: yesAdvanced Engineering Materials, EarlyView.
A modular recycling platform integrates 3D‐printed nanoporous gyroid structures to enable efficient critical element recovery. This system utilizes a hierarchical architecture, combining macroscopic channels with polymerization‐induced nanoscale porosity. By systematically tuning structural wall thickness and resin formulation, the platform achieves an
Xiangyu Gao   +6 more
wiley   +1 more source

Research Update: Strategies for efficient photoelectrochemical water splitting using metal oxide photoanodes

open access: yesAPL Materials, 2014
Photoelectrochemical (PEC) water splitting to hydrogen is an attractive method for capturing and storing the solar energy in the form of chemical energy.
Seungho Cho   +3 more
doaj   +1 more source

Recent Progress on Electrical and Optical Manipulations of Perovskite Photodetectors

open access: yesAdvanced Science, 2021
Photodetectors built from conventional bulk materials such as silicon, III–V or II–VI compound semiconductors are one of the most ubiquitous types of technology in use today.
Fang Wang   +18 more
doaj   +1 more source

Symmetry‐Guided Multifunctional Acoustic System Based on Mechanically Actuated Sonic Crystals

open access: yesAdvanced Engineering Materials, EarlyView.
This study presents the design, simulation, and experimental validation of amultifunctional acoustic metamaterial based on rotationally engineered sonic crystals.By tuning cylinder orientations, controllable band gaps and six distinct functionalities—including switching, topological insulation, beam splitting, and logic operations—areachieved ...
Yuanyan Zhao   +2 more
wiley   +1 more source

Cr-Based II-VI Semimagnetic Semiconductors [PDF]

open access: yes, 1995
We review the magnetic and optical properties of recently grown Cr-based II-VI semimagnetic semiconductors. We focus on two features of these materials which distinguish them from other semimagnetic semiconductors: the particular magnetic behaviour of ...
Twardowski, A.
core  

Physical Characteristics of Al/n-CdS Thin-Film Schottky Diode at High Temperatures

open access: yesInternational Journal of Technology, 2014
Cadmium sulphide (CdS), a member of group II-VI semiconductors, is a promising material based on its applications. The present investigations describe the preparation and electrical characterization of CdS thin films.
A.A. AL hattami   +5 more
doaj   +1 more source

Optical Properties of Pure and Eu Doped ZnSe Films Deposited by CSVS Technique [PDF]

open access: yesЖурнал нано- та електронної фізики, 2017
Pure (ZnSe) and europium doped (ZnSe:Eu) zinc selenide films were evaporated onto glass substrates using the close-spaced vacuum sublimation (CSVS) technique at different deposition conditions (substrate temperature).
M.M. Ivashchenko   +4 more
doaj   +1 more source

Entropy‐Driven Design of Low‐Melting‐Point Alloys via Compositionally Complex Strategy

open access: yesAdvanced Engineering Materials, EarlyView.
Conventional low‐melting‐point alloys (LMPAs) are limited by a narrow compositional space and inherent property trade‐offs. This review presents an entropy‐driven design strategy that overcomes these limitations, ushering in a new class of low‐melting‐point compositionally complex alloys (LMCCAs).
Yinghui Shang   +6 more
wiley   +1 more source

Electroluminescence in epitaxial thin film zns and znse [PDF]

open access: yes, 1987
The application of the metalorganic chemical vapour deposition technique to the production of II-VI compound semiconductor electroluminescent devices is discussed.
Jones, A. P. C., Jones, A.P.C
core  

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