Results 11 to 20 of about 6,740,814 (308)

Muonium in nano-crystalline II–VI semiconductors [PDF]

Physica B: Condensed Matter, 2009
The effect of quantum confinement on shallow-donor muonium states and their ionization in nanocrystalline colloidal II–VI semiconductors was studied by the transverse- and longitudinal-field μSR techniques. Evidence is found for the formation of surface muon states on nanocrystalline ZnO with hydrogen passivated surfaces. On nanocrystalline CdSe capped
Houtepen, A. J., Gil, J. M., Lord, J. S., Liljeroth, P., Vanmaekelbergh, D., Alberto, H. V., Vilão, R. C., Piroto Duarte, J., Ayres de Campos, N., Gavartin, J. L., Cox, S. F. J.   +10 more
openaire   +4 more sources

Porous II‐VI vs. porous III‐V semiconductors [PDF]

, 2010
Access full text - https://doi.org/10.1002/pssc.201000102In this work a morphological comparison of porous structures obtained by means of electrochemical etching in II-VI (ZnSe, CdSe) and III-V (InP, GaAs, GaP) semiconductors is presented.
LANGA, S., FÖLL, H., I. M. Tiginyanu, S. Langa, TIGINYANU, I. M., E. Monaico, H. Föll, MONAICO, E.   +7 more
core   +1 more source

Recent advances on fluorescent biomarkers of near-infrared quantum dots for in vitro and in vivo imaging

Science and Technology of Advanced Materials, 2019
Luminescence probe has been broadly used for bio-imaging applications. Among them, near-infrared (NIR) quantum dots (QDs) are more attractive due to minimal tissue absorbance and larger penetration depth.
Shanmugavel Chinnathambi, Naoto Shirahata   +1 more
doaj   +1 more source

Tuning the electronic and optical properties of the sphalerite by adsorbing halogen and alkali metals

IET Optoelectronics, 2021
TThe electronic and optical properties of sphalerite (ZnS) are modulated by adsorbing alkali metals (Li, Na, K, Rb, Cs) and halogen (F, Cl, Br, I, At). Simulations based on density‐functional theory are used to study the electronic and optical properties
Mohit Tyagi, Sudhanshu Choudhary
doaj   +1 more source

Revisiting the effects of Co(2)O(3) on multiscale defect structures and relevant electrical properties in ZnO varistors

High Voltage, 2020
Element doping is an effective method to improve the performance of ZnO varistors. Previous studies mainly focused on the variation of microstructures and Schottky barriers.
Men Guo, Yao Wang, Kangning Wu, Lei Zhang, Lei Zhang, Xia Zhao, Ying Lin, Jianying Li   +7 more
doaj   +1 more source

Preparation of Polycrystalline CdTe Films by Annealing of Amorphous Films Electrodeposited from Ammoniacal Alkaline Baths

High Temperature Materials and Processes, 2012
A new route to prepare polycrystalline CdTe films using electrodeposition of amorphous Cd-Te films and subsequent annealing was investigated. Amorphous Cd-Te films with Te-rich compositions could be electrodeposited from ammoniacal alkaline aqueous ...
Miyake Masao, Sugiura Takashi, Hirato Tetsuji   +2 more
doaj   +1 more source

Pulsed Laser Deposited Nickel Doped Zinc Oxide Thin Films: Structural and Optical Investigations [PDF]

Журнал нано- та електронної фізики, 2013
Structural and optical studies has been done on Nickel doped Zinc Oxide (NixZn1 – xO, x  0.03, 0.05 and 0.07 by weight) thin films prepared by pulsed laser deposition technique.
Tanveer A. Dar, Arpana Agrawal, Pratima Sen   +2 more
doaj  

Contribution to the study of electronic structure of crystalline semiconductors (Si, Ge, GaAs, Gap, ZnTe, ZnSe)

EPJ Web of Conferences, 2012
The band structure of semiconductors was described by several theorists since the Fifties. The main objective of the present paper is to do a comparative study between various families of semi-conductors IV (Si,Ge), III-V (GaAs, GaP) and II-VI (ZnSe ...
Bouhafs B., Mahi N.
doaj   +1 more source

Design of I-II-IV-VI semiconductors through element substitution:The thermodynamic stability limit and chemical trend [PDF]

, 2014
Through element substitution in CuZnSnS, a class of kesterite-structured I-II-IV-VI semiconductors can be designed as novel functional materials. Using the first-principles calculations, we show that this element-substitution design is thermodynamically ...
Xiang, H.-J., Wang, C., Yang, J.-H., Gong, X.-G., Walsh, A., Wei, S.-H., Lang, L., Chen, S.   +7 more
core   +1 more source

The thermo-electric nature of the Debye temperature

AIP Advances, 2018
The Debye temperature is typically associated with the heat capacity of a solid and the cut-off of the possible lattice vibrations, but not necessarily to the electric conductivity of the material. By investigating III-V and II-VI compound semiconductors,
Mithun Bhowmick, Bruno Ullrich, Maria Androulidaki, Haowen Xi   +3 more
doaj   +1 more source