Results 71 to 80 of about 6,740,814 (308)
Tailoring Heterovalent Interface Formation with Light
Integrating different semiconductor materials into an epitaxial device structure offers additional degrees of freedom to select for optimal material properties in each layer. However, interfaces between materials with different valences (i.e.
Kwangwook Park, Kirstin Alberi
doaj +1 more source
Monolithic UV‐ozone oxidation of Ta forms an ultrathin Ta2O5/TaOx bilayer enabling resistive switching with a vertical defect gradient. A stoichiometric surface layer over an oxygen‐deficient sublayer promotes localized filament nucleation near the top interface, enabling low‐voltage operation, and reduced cycle‐to‐cycle variability.
Seunghoon Yang +11 more
wiley +1 more source
We have developed and studied selected properties of three novel classes of inorganic organic hybrid semiconductors based on II-VI, VI-VI and I-VII binary phases in order to enhance the functionality over their parent structures. As a continuing
Zhang, Xiao, 1985-
core +1 more source
Photodetectors are indispensable components of many modern light sensing and imaging devices, converting photon energy into processable electrical signal through absorption, carrier generation and extraction using semiconducting thin films with ...
Shilpa Mariam Samuel +3 more
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The tapered CdS nanobelts and CdSe nanowires were prepared by hydrogen-assisted thermal evaporation method. Different supersaturation leads to two different kinds of 1D nanostructures.
Wang Min, Fei GuangTao
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Ultrafast Phenomena in II-VI Semiconductors
We review studies on the coherent and incoherent exciton dynamics in ZnSe-based quantum wells. First, the exciton—exciton scattering parameter is determined from femtosecond four-wave mixing as a function of background exciton density generated by a prepulse.
Kalt, Heinz +3 more
openaire +1 more source
Ambient‐Stable Transparent P‐Type CuI Transistors Via Room‐Temperature Pulsed Laser Deposition
An in situ PLD fabricated AlOx${\rm AlO}_x$/CuI/AlOx${\rm AlO}_x$ sandwich structure enables stable CuI TFTs with a field‐effect mobility of 2.3 ±$\pm$ 0.7 cm2${\rm cm}^{2}$ V−1${\rm V}^{-1}$ s−1${\rm s}^{-1}$ and excellent ambient stability. Complementary inverters based on CuI:Rb and ZnO:Al exhibit rail‐to‐rail voltage transfer characteristics and an
Yang Chen +5 more
wiley +1 more source
Tetrapod-Shaped Colloidal Nanocrystals of II−VI Semiconductors Prepared by Seeded Growth
We report a general synthetic approach to tetrapod-shaped colloidal nanocrystals made of various combinations of II−VI semiconductors. Uniform tetrapods were prepared using preformed seeds in the sphalerite structure, onto which arms were grown by ...
Rosanna Mastria (1283505) +10 more
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The relation between Debye temperature [Formula: see text] and energy gap [Formula: see text] for diamond-like structure semiconductors within groups IV, II-VI, III-V, I-III-VI2, II-IV-V2, III2-VI3 and I2-IV-VI3 was investigated. An empirical equation is
Muhammad Abdullah Hassan +1 more
doaj +1 more source
The design of intrinsically robust stretchable semiconducting polymers was achieved through OTBS‐mediated post‐functionalization of PDPP2T side chains with UPy units, generating dual hydrogen‐bonding motifs comprising weaker urethane linkages and strong quadruple UPy interactions along the long alkyl side chain, which is crucial for achieving desirable
Dinda Bazliah +7 more
wiley +1 more source

