Results 91 to 100 of about 6,740,814 (308)

Tuning the Optoelectronic Properties of Wide Bandgap Perovskites: Data‐Driven Insights from Combinatorial Synthesis and High‐Throughput Experimentation

Advanced Functional Materials, EarlyView.
Combinatorial vapor deposition enables independent tuning of Cs/Pb and Br/Cl in wide‐bandgap perovskites. Automated multimodal mapping of 500+ compositions reveals a high‐energy optical transition that correlates with enhanced photoluminescence, defining a practical Cs/Pb window.
Alexander Wieczorek, Sergey Tsarev, Nathan Rodkey, Oleksandr Pshyk, Stefanie Frick, Maksym V. Kovalenko, Sebastian Siol   +6 more
wiley   +1 more source

Simultaneous Enhancement of Performance and Stability in Dual‐Gate a‐IGZO Thin‐Film Transistors via Single‐Step Laser Annealing for Capacitor‐Less DRAM

Advanced Functional Materials, EarlyView.
A single‐step laser annealing strategy is presented for dual‐gate a‐IGZO TFTs. The steep thermal gradient induces graded oxygen doping in the channel and simultaneous WOx removal at the contacts, enabling concurrent interface and contact engineering.
Sihyeon Kwon, Junil Kim, Geuntae Park, Minseok Kim, Woohyun Hwang, Wanki Kim, Daewon Ha, Byeongmoon Lee, Jae Eun Jang, Hyuk‐Jun Kwon   +9 more
wiley   +1 more source

Functionalizing Micro‐to‐Mesoscopic Electrode Architectures for Regulating Electron Transfer Behaviors in Electrocatalysis

Advanced Functional Materials, EarlyView.
A systematic review is conducted to assess the influence of electrode architecture across micro‐ to mesoscopic length scales on electron‐transfer pathways in electrocatalysis. We discuss the structure‐activity relationships in electrocatalytic applications, including resource recovery and environmental remediation, and provide cost‐effective, efficient
Manshu Zhao, Jiaojiao Zhang, Shideng Yuan, Xinmeng Yu, Keming Wan, Xiaoguang Duan, Zhining Wang   +6 more
wiley   +1 more source

Magnetic interactions in IV-VI diluted magnetic semiconductors

, 2023
Diluted magnetic semiconductors (DMS) are interesting because of the interplay between the electronic and magnetic subsystems. We describe selected magnetic properties of IV-VI diluted magnetic semiconductors, looking at the similarities and differences ...
Górska, M., Łusakowski, A., Kilański, Ł.   +2 more
core  

A review on Type-I, Type-II, Z and S-scheme mechanisms involved in photocatalysis of inorganic and organic pollutant

Next Materials
This review evaluates the evolution from Type-I/II to advanced Z-scheme and S-scheme architectures for the remediation of toxic Cr(VI) and industrial dyes.
Ajay Lathe, Anil Mahadeo palve
doaj   +1 more source

Atom Probe Tomography as an Emerging Tool for Understanding Defect‑Driven Mechanisms in HfO2‑Based Ferroelectrics

Advanced Functional Materials, EarlyView.
This Perspective highlights atom probe tomography as a powerful tool for understanding the atomic‐scale defect chemistry in HfO2‐based ferroelectrics. 3D mapping of dopants, point defects, and interface chemistry can provide new insight into defect‐driven mechanisms underpinning the ferroelectricity in the system and guide the design of more reliable ...
Kasper Hunnestad, Catherine Dubourdieu, Alexei Gruverman, Dennis Meier   +3 more
wiley   +1 more source

ZnO nanorod synthesis from Zn-based II-VI semiconductors

, 2006
In this paper, we report the synthesis of ZnO nanorods on in-situ grown ZnSe grains by using the simple chemical vapor deposition (CVD) method and elementary sources of Zn and Se.
Choy, WCH, Pang, KH, Leung, YP, Guo, CF
core   +1 more source

Noise‐Limited Bit Precision in Ferroelectric Synaptic Transistors for High‐Resolution Neuromorphic Computing

Advanced Functional Materials, EarlyView.
Low‐frequency noise spectroscopy defines the resolvable conductance states of synaptic FeFETs by coupling read‐current fluctuation with usable dynamic range. The resulting noise‐limited bit precision establishes a universal, device‐agnostic reliability metric beyond the memory window, enabling quantitative benchmarking and rational design of high ...
Jaehong Park, Yeonseop Shin, Changhyeon Han, Sangwoo Kim, Eunchan Park, Youngchan Cho, Jaehong Min, Hyunjun Ahn, Jaekyoung Park, Cheol‐Woong Yang, Jangsaeng Kim, Daewoong Kwon, Wonjun Shin   +12 more
wiley   +1 more source

Efficient near-IR Second Harmonic Generation in II-VI Semiconductors

, 2001
We have measured the absolute value of the second-order non-linear optical coefficient (d(41)) at lambda = 1.5 mum in the bulk wide-bandgap II VI semiconductors ZnTe, Cd0.8Zn0.2Te, and Cd0.78Mn0.22Te, by evaluating the second harmonic generation (SHG ...
A Mycielski, A Zappettini, S M Pietralunga, A Milani, M Martinelli   +4 more
core   +1 more source

Two Coexisting Pathways to Volatility in Valence‐Change Memory Devices

Advanced Functional Materials, EarlyView.
Volatile VCM‐type memristive devices exhibit current relaxation after resistive switching, but their microscopic origin remains debated. Using pulsed measurements and a new Tunnel‐DLTS approach on Pt/SrTiO3/Nb:SrTiO3 devices, we show that post‐SET volatility is predominantly ionic, while electronic contributions—arising from quasi‐Fermi‐level ...
Johannes Hellwig, Clemens Wittberg, Dimitrios Spithouris, Regina Dittmann   +3 more
wiley   +1 more source