Results 111 to 120 of about 6,740,814 (308)
Advanced Functional Materials, EarlyView.Combined UV–vis transmittance and wavelength‐dependent photo‐assisted DC I–V analyses reveal defect‐induced optical instability and a high density of deep donor‐like subgap traps in La‐doped SrSnO3. The resulting MOSFET achieves one of the highest on/off ratios reported for ABO3 perovskite devices, demonstrating the promise of stannate perovskites as ...
Sojin Jung +17 more
wiley +1 more source
Advanced Functional Materials, EarlyView.The physical realization of artificial neurons is a critical challenge for energy‐efficient neuromorphic computing. This review presents a comprehensive analysis of the evolution of artificial neuron implementations from conventional CMOS to emerging post‐CMOS technologies.
Kannan Udaya Mohanan +4 more
wiley +1 more source
Bistability of Cation Interstitials in II-VI Semiconductors [PDF]
, 2005 The stability of cation interstitials in II-VI semiconductors is studied using ab initio methods. We find that interstitials in the neutral charge state are more stable in the tetrahedral interstitial site near the cation, whereas in the (2+) charge ...
Wei, S. H., Dalpian, G. M.
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Magneto-optic phenomena in II-VI diluted magnetic semiconductors: the Faraday and the Voigt effect
, 1992 Pronounced magneto-optic effects - Faraday rotation and Voigt birefringence - characterize the II-VI diluted magnetic semiconductors. The large sp-d exchange interaction and the antiferromagnetic coupling between the magnetic ions manifest themselves in ...
Oh, Eunsoon +2 more
core +1 more source
Reaction-dependent optical behavior and theoretical perspectives of colloidal ZnSe quantum dots
Scientific ReportsColloidal quantum dots (QDs) are attracting research interest because of their unique optical properties that result from the quantum confinement effect.
Duy Hoang Nguyen +4 more
doaj +1 more source
Advanced Functional Materials, EarlyView.HfxZr1−xO2${\rm Hf}_x{\rm Zr}_{1-x}{\rm O}_2$ offers CMOS‐compatible nanoscale ferroelectricity yet suffers from a high Ec${\rm E}_c$ demanding large operating voltages. A unified phase‐field framework spanning AFE/FE/DE phases shows how FE grains soften neighboring AFE grains over λ$\lambda$ ≈$\approx$ 22–37 nm.
P. Pankaj +4 more
wiley +1 more source
Nanocrystalline alloys of II-VI semiconductors from molecular multi-layer templates
, 1999 We present the synthesis and characterization of nanocrystalline II-VI semiconductors of mixed composition (CdSe/ZnSe, CdS) grown in fatty acid Langmuir-Schaefer multi-layer templates.
Cristofolini L, Facci P, Fontana MP
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Deposition of Cadmium Sulphide Thin Films by Photochemical Deposition and Characterization [PDF]
Журнал нано- та електронної фізики, 2015 Deposition of cadmium sulphide (CdS) thin films on glass substrates in acidic medium by photochemical deposition (PCD) and studies by several characterizations are presented. The structural characterization of the thin films was carried out by XRD.
H.L. Pushpalatha, R. Ganesha
doaj
Advanced Functional Materials, EarlyView.Temperature‐resolved in situ grazing‐incidence wide‐angle X‐ray scattering reveals that oxygen vacancies actively regulate crystallization in Hf0.5Zr0.5O2 thin films. By decoupling macroscopic strain from intrinsic phase evolution, a vacancy‐lean environment significantly lowers the activation energy barrier for crystallization.
Hyun Woo Jeong +9 more
wiley +1 more source
Correlation for III-V and II-VI Semiconductors of the Au Schottky Barrier Energy with Anion Electronegativity [PDF]
, 1976 The Schottky barrier for holes on common III-V and II-VI semiconductors contacted by Au is shown to depend only on the anion ...
McCaldin, J. O. +2 more
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