Results 101 to 110 of about 6,740,814 (308)
Study of II-VI semiconductors nanostrures by atom probe tomography
Les nanostructures de semiconducteurs II-VI ont de nombreuses applications en microélectronique, optoélectronique et photonique. Notamment, les boites quantiques II-V peuvent servir de source de photons uniques.
Benallali, Hammouda
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ZnSe Light Emitting Diode Quantum Efficiency and Emission Characterization
ZnSe has demonstrated as a potential candidate in realizing advance LED in some appications for current and future works that utilize a cheaper preparation technique. Blue and white LEDs have been shown to spread across compound semiconductors.
Sahbudin U.K. +7 more
doaj +1 more source
Scalable ultrafast epitaxy of large-grain and single-crystal II-VI semiconductors. [PDF]
Colegrove E +5 more
europepmc +1 more source
Binary‐to‐Ternary Reconfigurable Transistors Using Plasma‐Assisted MoS2
A binary‐to‐ternary reconfigurable transistor is demonstrated using a dual‐gated molybdenum disulfide homojunction with localized O2 plasma treatment. The device exhibits on/intermediate and intermediate/off current ratios of 102 and 104, respectively, and the intermediate state is electrically tunable in the ternary mode.
Yeonghyeon Ko +7 more
wiley +1 more source
421-428This paper describes the tunneling mechanoluminescence (ML) produced during fracture of II-VI semiconductors. The electric potential surrounding the charged dislocations bends, valence band and conduction band strongly and consequently, the ...
Singh, Anubha +4 more
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A scalable, solution‐processed WSe2/ZrO2‐x van der Waals heterostructure realizes a light‐induced field‐tunneling synapse (LIFTS) that activates exclusively under bright illumination, emulating the photopic adaptation of the human retina at the device level.
Kijeong Nam +10 more
wiley +1 more source
Angular dependence of impurity scattering in II-VI compound semiconductors
788-790The probability of scattering by ionized impurities has been calculated as a function of the scattering angle in n-type II-VI compound semiconductors like ZnO, ZnS, CdS, CdSe and CdTe at 77 K.
Mukhopadhyay, D, Mallick, P S
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Memristive‐Gated RC‐Delay Synaptic Transistors for Time‐Encoded Analog in‐Memory Computing
A Memristive‐Gated Transistor for Time‐Encoded Analog In‐Memory Computing — By exploiting the RC delay of a self‐rectifying interface‐type memristor, nonlinear I–V distortion is structurally bypassed, enabling 3‐bit nonvolatile memory, spike‐timing‐based analog encoding, and hardware‐calibrated reservoir‐computing validation within a unified device ...
Yun‐Seo Shin +7 more
wiley +1 more source
The development of II-VI semiconductors for blue diode lasers
Current injection lasers operating in the blue and blue-green spectral regions have recently been fabricated from II-VI semiconductors. In this paper, the current status of these devices is assessed and the materials developments leading to their ...
Prior, K.
core
Perovskite, as a promising class of photodetection material, demonstrates considerable potential in replacing conventional bulk light-detection materials such as silicon, III–V, or II–VI compound semiconductors and has been widely applied in various ...
Jiarui Zhang, Chi Ma
doaj +1 more source

