Results 241 to 250 of about 12,756,435 (265)

Comparison of Quantum Transition Characteristics of Group II-VI (ZnO), Group III-V (GaN) Compound Semiconductors, and Intrinsic (Si) Semiconductors in Response to Externally Applied Energy. [PDF]

Materials (Basel)
Park H, Lee SH.
europepmc   +1 more source

Advanced physical modeling approaches for high-precision TCAD simulation of GaN HEMT power devices: a review. [PDF]

Discov Nano
Zhao H, Firdaus A, Farizuan M, Tan WH, Kawarada H, Falina S, Syamsul M.   +6 more
europepmc   +1 more source

Effects of Growth Temperature on the Compositions of GaAsSb/AlAsSb Epitaxial Layers Grown on GaAs Substrates. [PDF]

ACS Omega
Laryn T, Kim Y, Chu RJ, Choi WJ, Jung D.
europepmc   +1 more source

Threading dislocation reduction in heteroepitaxial GaSb based superlattices grown on silicon. [PDF]

Sci Rep
Delli E, Bentley M, Mulholland N, Hodgson PD, de la Mata M, Molina SI, Beanland R, Wagener MC, Botha JR, Marshall ARJ, Carrington PJ.   +10 more
europepmc   +1 more source

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