Results 1 to 10 of about 1,556,528 (263)
Neural network connectivity by optical broadcasting between III-V nanowires [PDF]
NanophotonicsBiological neural network functionality depends on the vast number of connections between nodes, which can be challenging to implement artificially. One radical solution is to replace physical wiring with broadcasting of signals between the artificial ...
Draguns Kristians +6 more
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Documenta Praehistorica, 2023 To investigate the dating of Troy III-V, and in particular to test whether in Blegen's Troy sequence a gap exists between Troy III and Troy IV, 26 bone samples covering Troy III to VIa from the University of Cincinnati excavations were submitted for 14C-
Donald Easton, Bernhard Weninger
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Recent Advances in the Growth and Compositional Modelling of III–V Nanowire Heterostructures [PDF]
NanomaterialsNanowire heterostructures offer almost unlimited possibilities for the bandgap engineering and monolithic integration of III–V photonics with Si electronics.
Egor D. Leshchenko, Nickolay V. Sibirev
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Different III-V semiconductor nanowires with quantum dots on silicon: growth by molecular-beam epitaxy and properties [PDF]
Научно-технический вестник информационных технологий, механики и оптики, 2021 Recently, III-V semiconductor nanostructures of reduced dimension attract more and more interest of researchers for the new generation devices creation.
Rodion R. Reznik +5 more
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Applied Sciences, 2021 Heterogeneously integrated III-V/Si lasers and semiconductor optical amplifiers (SOAs) are key devices for integrated photonics applications requiring miniaturized on-chip light sources, such as in optical communications, sensing, or spectroscopy.
Joan Manel Ramírez +10 more
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Results in Chemistry, 2022 The cyanide groups of [Cr(CN)6]3−, [Mo(CN)8]3− and [W(CN)8]3− may be used to bridge several mono-nuclear transition metal-salen complexes to form different di-, tri-, tetra- hexa- and poly-nuclear complexes of different molecular architectures.
Sk. Jiyaur Rahaman +1 more
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EPJ Photovoltaics, 2023 The integration of III-V multi-junction solar cells on Si substrates is currently one of the most promising possibilities to combine high photovoltaic performance with a reduction of the manufacturing costs.
Soresi Stefano +12 more
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Revealing of InP multi-layer stacks from KPFM measurements in the dark and under illumination
EPJ Photovoltaics, 2022 Solar cells are complex devices, being constituted of many layers and interfaces. The study and the comprehension of the mechanisms that take place at the interfaces is crucial for efficiency improvement. This paper applies Kelvin probe force microscopy (
da Lisca Mattia +6 more
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Applied Sciences, 2021 The tremendous demand for low-cost, low-consumption and high-capacity optical transmitters in data centers challenges the current InP-photonics platform.
Claire Besancon +12 more
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IEEE Journal of the Electron Devices Society, 2019 We report the performances of a 0.7-μm InP/GaInAs DHBT developed in III-V Lab demonstrating both fT and f MAX of 400 GHz as well as a high fabrication yield and homogeneity on a 3-inch wafer.
V. Nodjiadjim +6 more
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