Results 21 to 30 of about 14,297,124 (313)
180nm metal gate, high-k dielectric, implant-free III--V MOSFETs with transconductance of over 425 μS/μm [PDF]
, 2007 : Data is reported from 180 nm gate length GaAs n-MOSFETs with drive current (Ids,sat) of 386 μA/μm (Vg=Vd =1.5 V), extrinsic transconductance (gm) of 426 μS/μm, gate leakage ( jg,limit) of 44 nA/cm2, and on resistance (Ron) of 1640 Ω μm. The gm and Ron
Moran, D.A.J. +8 more
core +1 more source
Molecules, 2020 Berberine is an alkaloid of the protoberberine type used in traditional oriental medicine. Its biological activities include documented antibacterial properties against a wide variety of microorganisms; nonetheless, its use against Escherichia coli ...
Giulio Petronio Petronio +8 more
doaj +1 more source
Revista Portuguesa de Medicina Geral e Familiar, 2022 Introdução: Vários regimes de antibioterapia têm sido propostos para tratamento da infeção por Helicobater pylori (Hp) e a escolha de terapêutica adequada deve basear-se nas resistências locais aos antibióticos, com recurso a terapia quádrupla ...
Estela Cabral +4 more
doaj +1 more source
Beilstein Journal of Nanotechnology, 2023 Multilayer III–V-based solar cells are complex devices consisting of many layers and interfaces. The study and the comprehension of the mechanisms that take place at the interfaces is crucial for efficiency improvement.
Mattia da Lisca +6 more
doaj +1 more source
Gaucher's disease: report of 11 cases with review of literature
The Pan African Medical Journal, 2015 Gaucher's disease (GD) is a lysosomal storage disorder due to glucocerebrosidase deficiency; it's one of the rare genetic diseases for which therapy is now available. The purpose of this work is to study the epidemiological features of the disease and to
Laila Essabar +5 more
doaj +1 more source
Optimizing DC and RF characteristics of Pseudomorphic AlGaN/InGaN/GaN HEMT for GHZ application [PDF]
Serbian Journal of Electrical EngineeringThis paper presents a design and in-depth analysis of DC and RF characteristics of Pseudomorphic AlGaN/InGaN/GaN High Electron Mobility Transistor (HEMT) for microwave application.
Ahmad Neda, Rewari Sonam, Nath Vandana
doaj +1 more source
, 2018 International audienceWe report on a fully integrated hybrid III-V on a silicon distributed feedback laser integrated with a ring resonator. We demonstrate an enhanced extinction ratio up to 5 dB at 25 Gb/s of the distributed feedback laser when the ring-
Antonin Gallet +23 more
core +1 more source
III-V-Based Optoelectronics with Low-Cost Dynamic Hydride Vapor Phase Epitaxy
Crystals, 2018 Silicon is the dominant semiconductor in many semiconductor device applications for a variety of reasons, including both performance and cost. III-V materials exhibit improved performance compared to silicon, but currently, they are relegated to ...
John Simon +5 more
doaj +1 more source
Pediatric Blood &Cancer, EarlyView.ABSTRACT Pediatric gastroenteropancreatic neuroendocrine neoplasms (GEP‐NENs) are extremely rare and clinically heterogeneous. Management has largely been extrapolated from adult practice. This European Standard Clinical Practice Guideline (ESCP), developed by the EXPeRT network in collaboration with adult NEN experts, provides (adult) evidence ...
Michaela Kuhlen +23 more
wiley +1 more source
Pediatric Blood &Cancer, EarlyView.ABSTRACT As part of the European Cooperative Study Group for Paediatric Rare Tumours initiative, we developed standard clinical practice guidelines for ovarian sex cord stromal tumors, based on comprehensive national and international cohort analyses, literature review, and a final expert consensus conference.
Dominik T. Schneider +15 more
wiley +1 more source