Results 101 to 110 of about 12,756,435 (265)
, 2004 Semiconductors -- October 2004 Volume 38, Issue 10, pp. 1115-1239 REVIEW Photosensitive Polymer Semiconductors E. L. Aleksandrova pp. 1115-1159 Full Text: PDF (557 kB) ATOMIC STRUCTURE AND NONELECTRONIC PROPERTIES OF SEMICONDUCTORS ...
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Advanced Functional Materials, EarlyView.Rapid microwave plasma torch engineering tunes crystal phases, carbon graphitization and oxygen‐vacancy defects in HfO2/C@C core‐shell fibrous membranes. Synergistic multi‐loss effects optimize impedance matching to deliver −65.75 dB reflection loss and a 7.37 GHz effective bandwidth for flexible electromagnetic wave absorption.
Qichao Ding +14 more
wiley +1 more source
, 1999 Semiconductors -- November 1999 Volume 33, Issue 11, pp. 1157-1264 ATOMIC STRUCTURE AND NON-ELECTRONIC PROPERTIES OF SEMICONDUCTORS Spatially inhomogeneous oxygen precipitation in silicon S. V. Bulyarskii, V. V. Svetukhin, and O. V.
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Advanced Functional Materials, EarlyView.OEG‐functionalized Y6‐derived acceptors induce thermally driven vertical phase separation, enabling pseudo‐planar heterojunction organic photodetectors. The resulting PM6:YTEG‐4F and PM6:YTEG‐4Cl organic photodetectors suppress dark current density by approximately 260‐fold and 210‐fold, respectively, while maintaining efficient photoresponse ...
Se Jeong Park +11 more
wiley +1 more source
, 1999 Semiconductors -- February 1999 Volume 33, Issue 2, pp. 107-222 REVIEW Deep level centers in silicon carbide: A review A. A. Lebedev Full Text: PDF (404 kB) ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS Optically active layers ...
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Architecture‐Driven Functional Coupling in Vertically Aligned Nanocomposites
Advanced Functional Materials, EarlyView.Vertically aligned nanocomposites define a growth‐engineered architecture in which vertical interfaces, strain fields, defect pathways, and phase connectivity are created simultaneously. This review shows how these architectural features couple ferroic, optical, ionic, electrochemical, and device responses, establishing design rules and open challenges
Md Shatil Islam‐Shanto +4 more
wiley +1 more source
, 2002 Semiconductors -- October 2002 Volume 36, Issue 10, pp. 1073-1197 ATOMIC STRUCTURE AND NONELECTRONIC PROPERTIES OF SEMICONDUCTORS Thermodynamic Stability of Bulk and Epitaxial Ge1 – xSnx Semiconductor Alloys V. G. Deibuk and Yu. G.
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Ground‐State Charge‐Transfer Doping in Donor–Acceptor Semiconducting Polymers
Advanced Functional Materials, EarlyView.This work demonstrates controlled ground‐state charge‐transfer complex formation (GS‐CTC) and doping in a series of diketopyrrolopyrrole‐based donor–acceptor semiconducting polymers paired with a π‐conjugated penta‐t‐butylpentacyanopentabenzo[25]annulene “cyanostar” macrocycle. Complementary experimental techniques show how subtle molecular, electronic,
Tanner L. Smith +13 more
wiley +1 more source
, 2002 Semiconductors -- March 2002 Volume 36, Issue 3, pp. 239-362 ATOMIC STRUCTURES AND NONELECTRONIC PROPERTIES OF SEMICONDUCTORS Clustering of Defects and Impurities in Hydrogenated Single-Crystal Silicon Kh. A. Abdulin, Yu. V. Gorelkinskii, B. N.
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Advanced Functional Materials, EarlyView.An Alhagi maurorum inspired hierarchical composite membrane (NFCu) was developed by integrating heavy metal remediation and solar‐driven interfacial evaporation in a single platform. Beyond the photothermal effect, a localized photocatalytic process is realized on the CuO surface, deepening the mechanistic understanding of light–matter–water ...
Yuqiong He +9 more
wiley +1 more source