Results 1 to 10 of about 13,433 (215)

Infinite possibilities of ultrathin III-V semiconductors: Starting from synthesis [PDF]

iScience, 2022
Summary: Ultrathin III-V semiconductors have been receiving tremendous research interest over the past few years. Owing to their exotic structures, excellent physical and chemical properties, ultrathin III-V semiconductors are widely applied in the field
Fangyun Lu, Huiliu Wang, Mengqi Zeng, Lei Fu   +3 more
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Direct growth of single-crystalline III–V semiconductors on amorphous substrates [PDF]

Nature Communications, 2016
Growth of high-quality III–V semiconductors for electronics and optoelectronics usually requires an atomic-lattice matched substrate. Here, the authors use templated liquid-phase crystal growth to create single-crystalline III–V material up to ten ...
Kevin Chen, Rehan Kapadia, Audrey Harker, Sujay Desai, Jeong Seuk Kang, Steven Chuang, Mahmut Tosun, Carolin M. Sutter-Fella, Michael Tsang, Yuping Zeng, Daisuke Kiriya, Jubin Hazra, Surabhi Rao Madhvapathy, Mark Hettick, Yu-Ze Chen, James Mastandrea, Matin Amani, Stefano Cabrini, Yu-Lun Chueh, Joel W. Ager III, Daryl C. Chrzan, Ali Javey   +21 more
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Doubly-Resonant Photonic Crystal Cavities for Efficient Second-Harmonic Generation in III–V Semiconductors [PDF]

Nanomaterials, 2021
Second-order nonlinear effects, such as second-harmonic generation, can be strongly enhanced in nanofabricated photonic materials when both fundamental and harmonic frequencies are spatially and temporally confined.
Simone Zanotti, Momchil Minkov, Shanhui Fan, Lucio C. Andreani, Dario Gerace   +4 more
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Dense Plasma Focus-Based Nanofabrication of III–V Semiconductors: Unique Features and Recent Advances

Nanomaterials, 2015
The hot and dense plasma formed in modified dense plasma focus (DPF) device has been used worldwide for the nanofabrication of several materials. In this paper, we summarize the fabrication of III–V semiconductor nanostructures using the high fluence ...
Onkar Mangla, Savita Roy, Kostya (Ken) Ostrikov   +2 more
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Group III-V semiconductors as promising nonlinear integrated photonic platforms

Advances in Physics: X, 2022
Group III–V semiconductors are based on the elements of groups III and V of the periodic table. The possibility to grow thin-films made of binary, ternary, and quaternary III–V alloys with different fractions of their constituent elements allows for the ...
Kaustubh Vyas, Daniel H. G. Espinosa, Daniel Hutama, Shubhendra Kumar Jain, Rania Mahjoub, Ehsan Mobini, Kashif M. Awan, Jeff Lundeen, Ksenia Dolgaleva   +8 more
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Role of nitrogen source flow on the growth of 2D GaN crystals

Results in Physics, 2022
As a class of non-layered compounds, ultrathin III-V semiconductors possess excellent physical and chemical properties, are promising candidates for optoelectronic and thermoelectric applications. Due to the strong chemical bonds both in plane and out of
Gehui Zhang, Xiangping Chen, Meijie Zhu, Hua Xu, Zuoquan Tan, Ruitao Luo, Jiaqi Jia, Le Wang   +7 more
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Heteroepitaxial Growth of III-V Semiconductors on Silicon

Crystals, 2020
Monolithic integration of III-V semiconductor devices on Silicon (Si) has long been of great interest in photonic integrated circuits (PICs), as well as traditional integrated circuits (ICs), since it provides enormous potential benefits, including ...
Jae-Seong Park, Mingchu Tang, Siming Chen, Huiyun Liu   +3 more
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High‐power‐density InAlGaN/GaN HEMT using InGaN back barrier for W‐band amplifiers

Electronics Letters, 2023
This paper investigated the back‐barrier (BB) effect for gallium nitride (GaN)‐based high‐electron‐mobility transistors with an Fe‐doped buffer and Fe‐buffer + Indium gallium nitride (InGaN)‐BB structure.
Junji Kotani, Kozo Makiyama, Toshihiro Ohki, Shiro Ozaki, Naoya Okamoto, Yuichi Minoura, Masaru Sato, Norikazu Nakamura, Yasuyuki Miyamoto   +8 more
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Universal growth of ultra-thin III–V semiconductor single crystals

Nature Communications, 2020
Here, the authors synthesize a variety of ultra-thin III–V single crystals, ranging from ultra-narrow to wide bandgap semiconductors, through enhancing the interfacial interaction between the III–V crystals and the growth substrates.
Yunxu Chen, Jinxin Liu, Mengqi Zeng, Fangyun Lu, Tianrui Lv, Yuan Chang, Haihui Lan, Bin Wei, Rong Sun, Junfeng Gao, Zhongchang Wang, Lei Fu   +11 more
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Selective electrodeposition of indium microstructures on silicon and their conversion into InAs and InSb semiconductors

Nanoscale Research Letters, 2023
The idea of benefitting from the properties of III-V semiconductors and silicon on the same substrate has been occupying the minds of scientists for several years.
Katarzyna E. Hnida-Gut, Marilyne Sousa, Preksha Tiwari, Heinz Schmid   +3 more
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