Results 21 to 30 of about 12,756,435 (265)
Light People: Professor Lan Fu
Light: Science & Applications, 2023 Editorial III-V semiconductors are compound semiconductor materials formed by combining group-III and group-V elements. With properties such as direct bandgap, high electron mobility, good homogeneity of large-size crystals and good lattice matching ...
Hui Wang, Cun Yu
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Altering the Optical Properties of GaAsSb-Capped InAs Quantum Dots by Means of InAlAs Interlayers
Nanoscale Research Letters, 2019 In this work, we investigate the optical properties of InAs quantum dots (QDs) capped with composite In0.15Al0.85As/GaAs0.85Sb0.15 strain-reducing layers (SRLs) by means of high-resolution X-ray diffraction (HRXRD) and photoluminescence (PL) spectroscopy
A. Salhi +6 more
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IEEE Journal of the Electron Devices Society, 2017 We report on the fabrication of a near broken InAs/Al0.5Ga0.5Sb vertical TUNNEL field effect transistor (TFET). The epitaxial structure is grown on a GaAs (001) substrate thanks to large mismatch accommodation at the GaSb/GaAs interface.
Vinay Kumar Chinni +6 more
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New Journal of Physics, 2021 Understanding the carrier dynamics of nanostructures is the key for development and optimization of novel semiconductor nano-devices. Here, we study the optical properties and carrier dynamics of (InGa)(AsSb)/GaAs/GaP quantum dots (QDs) by means of non ...
Petr Steindl +4 more
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Amorphous group III–V semiconductors
, 2016 Structural disorder is common to the amorphous Group IV and III–V semiconductors as manifested by an increase in bondlength and Debye-Waller factor and a decrease in coordination number relative to the crystalline phase.
Ridgway, Mark C.
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Structural and optical study of alternating layers of In and GaAs prepared by magnetron sputtering
Universitas Scientiarum, 2019 Currently, the obtention of nano-structures based on III-V materials is expensive. This calls for novel and inexpensive nanostructure manufacturing approaches.
S. Torres- Jaramillo, C. Pulzara-Mora, R. Bernal-Correa, M. Venegas de la Cerda, S. Gallardo-Hernández, M. López-López, A. Pulzara-Mora
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Modular Critical Element Recycling Platform Using a Nanoporous Additively Manufactured Gyroid
Advanced Engineering Materials, EarlyView.A modular recycling platform integrates 3D‐printed nanoporous gyroid structures to enable efficient critical element recovery. This system utilizes a hierarchical architecture, combining macroscopic channels with polymerization‐induced nanoscale porosity. By systematically tuning structural wall thickness and resin formulation, the platform achieves an
Xiangyu Gao +6 more
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The Study of Transport Properties of (III−Mn) V Diluted Magnetic Semiconductors
Advances in Condensed Matter Physics, 2023 We investigated the transport properties of diluted magnetic semiconductors (DMSs) theoretically by using the Heisenberg and Ruderman–Kittel–Kasuya–Yosida (RKKY) exchange interaction models by considering both spin and charge disorder.
Edosa Tasisa Jira, Habte Dulla Berry
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Frontiers in Electronics, 2023 Two-dimensional (2-D) semiconductors are emerging as strong contenders for the future of Angstrom technology nodes. Their potential lies in enhanced device scaling and energy-efficient switching compared to traditional bulk semiconductors like Si, Ge ...
Keshari Nandan +3 more
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Symmetry‐Guided Multifunctional Acoustic System Based on Mechanically Actuated Sonic Crystals
Advanced Engineering Materials, EarlyView.This study presents the design, simulation, and experimental validation of amultifunctional acoustic metamaterial based on rotationally engineered sonic crystals.By tuning cylinder orientations, controllable band gaps and six distinct functionalities—including switching, topological insulation, beam splitting, and logic operations—areachieved ...
Yuanyan Zhao +2 more
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