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PáSoNetka - a Brief Reflection from the Weekend Conference "By Young for Young" Doctors

Gender a Výzkum
Josef Vošmik, Šárka Tomová, Barbora East   +2 more
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Modification of heterojunction band offsets at III–V/IV/III–V interfaces

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, 1993
III–V/IV semiconductor heterojunctions (with IV=Si, Ge, and III–V=GaAs, AlAs) as well as III–V/IV/III–V single and multiple quantum well structures have been synthesized by molecular beam epitaxy and characterized by a variety of in situ and ex situ characterization techniques.
A Franciosi, L Sorba, G Bratina, G Biasiol   +3 more
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Oxidation of III–V semiconductors

Corrosion Science, 2007
Abstract This paper focuses on the characterization of anodic films (formed in aqueous electrolytes) and thermal oxides (formed at ∼500 °C) on GaAs, InP, AlGaAs, InAlAs, InAlP and heterostructures for GaAs- and InP-based devices. Emphasis is placed on Al-containing oxides, particularly on InAlP which possess good insulating properties.
Graham, M. J., Moisa, S., Sproule, G. I., Wu, X., Landheer, D., SpringThorpe, A. J., Barrios, P., Klebber, S., Schmuki, P.   +8 more
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Channeling studies of III–V/III–V and IV/III–V semiconductor modulated structures

Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena, 1983
He+-ion channeling spectrometry has been used to study the lattice crystallinity and interface structures of two different types of semiconductor superlattices: InAs–GaSb and Ge–GaAs, both (100)-oriented and grown by molecular beam epitaxy (MBE). The channeling measurements indicate good epitaxy, low density of defects, and very interesting interface ...
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Microscopic capacitors and neutral interfaces in III-V/IV/III-V semiconductor heterostructures

Physical Review Letters, 1992
We examined band discontinuities in AlAs-Ge-GaAs(001) and GaAs-Ge-AlAs(001) single-quantum-well structures, as well as individual isolated Ge-GaAs(001), Ge-AlAs(001), GaAs-Ge(001), and AlAs-Ge(001) heterojunctions. We found that well-defined in- equivalent neutral interfaces are established in III-V/IV/III-V structures for Ge coverages as low as 1--2 ...
G. Biasiol, L. Sorba, G. Bratina, R. Nicolini, FRANCIOSI, ALFONSO, PERESSI, MARIA, S. Baroni, RESTA, Raffaele, BALDERESCHI, ALFONSO   +8 more
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Fundamental studies of III–V surfaces and the (III–V)-oxide interface

Thin Solid Films, 1979
Work using photoemission with synchrotron radiation (8 eV < hv < 300 eV) to investigate chemisorption and the formation of thin oxide layers on GaAs is reviewed and preliminary correlations with thick oxides are made. An advantage of synchrotron radiation is that it allows examination of both core and valence electrons of the last few molecular layers ...
W.E. Spicer, I. Lindau, P. Pianetta, P.W. Chye, C.M. Garner   +4 more
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Microwave III-V semiconductors for telecommunications and prospective of the III-V industry

Proceedings International Symposium on Quality Electronic Design, 2003
The microwave III-V semiconductor IC technology (primarily GaAs) has emerged as a powerful enabling technology for wireless and optical communications in the past 5 years. It has been dominating, or making substantial penetration into, the market for handset power amplifiers and switches, advanced wireless LAN RF front-ends and various other key RF ...
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Epitaxial Growth of III-V Materials on Implanted III-V Substrates

1988
In conjunction with ion implantation, the epitaxial processes can be very attractive technologies for achieving monolithic integration of microwave and electro-optical devices. We present results on the epitaxial growth of III-V compounds, molecular beam epitaxy (MBE) and metalorganic chemical vapor deposition (MO - CVD), on III-V substrates previously
P. N. Favennec, H. L’Haridon, M. Salvi, L. Henry, A. Corre, D. Lecrosnier, M. A. Diforte Poisson, J. P. Duchemin   +7 more
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III.–v.

2008
When he returned she was dressed as usual. ‘Now could I get out without anybody seeing me?’ she asked. ‘The town is not yet astir.’ ‘But you have had no breakfast.’ ‘O, I don’t want any!
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