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Temperature-Insensitive Band-Gap III-V Semiconductors: Tl-III-V and III-V-Bi
2017Thallium-containing III-V (Tl-III-V) and bismuth-containing III-V (III-V-Bi) alloy semiconductors were first proposed as novel functional semiconductors. They are alloys consisting of semiconductors (III-V) and semimetals (Tl-V, III-Bi), and are important materials for the fabrication of temperature-insensitive lasing wavelength laser diodes as well as
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Molecular Beam Epitaxial Growth and Characterization of III-V/III-V and IV/III-V Heterostructures
1985Semiconductor heterostructures, both single interfaces and superlattices, have been made by molecular beam epitaxy (MBE) for many different materials. In this paper we describe the MBE growth of a variety of III-V/III-V systems including GaAs-Ga1-xA1xAs, InAs-GaAs, In1-xGaxAs-In1-yGayAs, GaSb-GaAs, InAs-GaSb, In1-xGaxAs-GaSb1-yAsy, A1Sb-GaAs, A1Sb-GaSb
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Microelectronic Engineering, 1996
The study of nanoelectronic devices, where critical dimensions lie in the 10-100 nm size range, has been particularly fruitful in III-V semiconductors due in large part to a favourable combination of precise fabrication technologies and excellent electron transport properties.
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The study of nanoelectronic devices, where critical dimensions lie in the 10-100 nm size range, has been particularly fruitful in III-V semiconductors due in large part to a favourable combination of precise fabrication technologies and excellent electron transport properties.
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2011
Results of treatment of patients with cutaneous lower extremity melanoma with III???V Clark level of invasion were studied retrospectively for 22 years (1984???2004). Patients with clinically negative lymph nodes (LN) were divided into two groups accordingly to tactic after removal of primary tumor: 1 ???
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Results of treatment of patients with cutaneous lower extremity melanoma with III???V Clark level of invasion were studied retrospectively for 22 years (1984???2004). Patients with clinically negative lymph nodes (LN) were divided into two groups accordingly to tactic after removal of primary tumor: 1 ???
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2015
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2004
All phosphides, arsenides and antimonides of boron, aluminum, gallium and antimony (BP, BAs, BSb, AlP, AlAs, AlSb, GaP, GaAs, GaSb, InP, InAs, InSb) crystallize under normal conditions in the (cubic) zincblende lattice (space group \( T_{d^2 } - F\bar 4 3m \) ).
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All phosphides, arsenides and antimonides of boron, aluminum, gallium and antimony (BP, BAs, BSb, AlP, AlAs, AlSb, GaP, GaAs, GaSb, InP, InAs, InSb) crystallize under normal conditions in the (cubic) zincblende lattice (space group \( T_{d^2 } - F\bar 4 3m \) ).
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2015
In this chapter we consider the current state of the art for detectors and FPAs fabricated on III-V materials. Again, considerations will be limited to data available in the open literature. There are two meaningful choices of architecture for III-V FPAs, namely, the photodiode and the barrier layer photoconductor.
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In this chapter we consider the current state of the art for detectors and FPAs fabricated on III-V materials. Again, considerations will be limited to data available in the open literature. There are two meaningful choices of architecture for III-V FPAs, namely, the photodiode and the barrier layer photoconductor.
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Mikroelektronik auf III-V-Halbleitern/ Microelectronics on III-V-Semiconductors
itit, 1992openaire +1 more source