Results 171 to 180 of about 12,756,485 (311)
Bioinspired Adaptive Sensors: A Review on Current Developments in Theory and Application
This review comprehensively summarizes the recent progress in the design and fabrication of sensory‐adaptation‐inspired devices and highlights their valuable applications in electronic skin, wearable electronics, and machine vision. The existing challenges and future directions are addressed in aspects such as device performance optimization ...
Guodong Gong +12 more
wiley +1 more source
Semiconductors -- March 1998 Volume 32, Issue 3, pp. 231-342 Growth characteristics and physical properties of PbTe/BaF2 prepared under nonequilibrium conditions S. V.
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Ion‐Reconfigurable “N”‐Shaped Antiambipolar Behavior in Organic Electrochemical Transistors
A unique N‐shaped negative differential transconductance (NDT) characteristics is demonstrated in single‐polymer organic electrochemical transistors through a sequential doping–redox–doping process driven by iodide ions. This redox‐driven mechanism enables low‐voltage, ion‐controlled reconfigurability and tunable current modulation, allowing seamless ...
Debdatta Panigrahi +11 more
wiley +1 more source
Semiconductors -- June 2003 Volume 37, Issue 6, pp. 617-739 ATOMIC STRUCTURE AND NONELECTRONIC PROPERTIES OF SEMICONDUCTORS Effect of Highly Nonequilibrium Conditions on the Stoichiometry of Cadmium Telluride Layer Obtained by Vapor-Phase ...
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Beyond Wisdom in III-V Optoelectronics: Physics-Enhanced Neural Networks Unveil the Role of Cubic Boron Arsenide. [PDF]
Ren W +15 more
europepmc +1 more source
Energetic Offset in Organic Solar Cells‐ Importance, Confusion and Outlook
Energetic offsets in organic solar cells (OSCs) remain a subject of debate due to measurement‐ and lab‐dependent discrepancies. This Perspective clarifies the physical origins of these variations and identifies temperature‐dependent electro‐optical methods as a reliable approach to obtain consistent offset values.
Nakul Jain +5 more
wiley +1 more source
Semiconductors -- April 2001 Volume 35, Issue 4, pp. 371-489 ATOMIC STRUCTURE AND NONELECTRONIC PROPERTIES OF SEMICONDUCTORS The Effect of Various Types of Shallow Impurities and Their Concentration on Microhardness and Photomechanical Properties
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Limits to the Hall Effect and Other Nonreciprocal Effects in Three‐Dimensional Metamaterials
Comprehensive and fundamental bounds on nonreciprocal effects in three‐dimensional metamaterials are derived. They reveal that the effective Hall mobility cannot exceed the largest constituent mobility, that, under certain conditions, the Verdet constant cannot be enhanced, and that, for constituents with Hall coefficients of the same sign, the largest
Christian Kern, Graeme W. Milton
wiley +1 more source
Semiconductors -- October 1997 Volume 31, Issue 10, pp. 989-1099 Thermodynamic analysis of the molecular-beam epitaxial growth of quaternary III-V compounds: GaxIn1 – xPyAs1 – y A. Yu. Egorov, A. R. Kovsh, A. E. Zhukov, V. M. Ustinov, and P.
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μFlow: A Computational Platform for Microfluidic Hall-Effect Magnetic Bead Detection with Parametric Design Optimization. [PDF]
Govindaraju H, Hassan U.
europepmc +1 more source

