Beyond Point-like Defects in Bulk Semiconductors: Junction Spectroscopy Techniques for Perovskite Solar Cells and 2D Materials. [PDF]
Capan I.
europepmc +1 more source
Path‐decoupled III–V van der Waals memtransistors spatially separate ionic and electronic transport to overcome the conventional trade‐off between accuracy and energy in neuromorphic hardware. Mobile K+ ions in the vdW gaps set a wide conductance window, Gmax/Gmin, while gate‐tunable hole conduction lowers programming energy, enabling reliable ...
Jihong Bae +13 more
wiley +1 more source
High-Mobility and Reliability Ultra-Thin-Channel Oxide Semiconductor Field-Effect Transistors for Chip-Interconnect-Embedded Logic and Ferroelectric Memory. [PDF]
Chen CK +12 more
europepmc +1 more source
“Smelltronics”—From Gas to Smell Sensing
The emerging field of smelltronics, encompassing sensing technologies for complex volatile organic compounds, holds significant potential for extracting valuable chemical information. It facilitates the noninvasive, real‐time monitoring of humans, food, and the environment.
Takeshi Ono +7 more
wiley +1 more source
Di-ortho-fluoroazobenzene Functionalized Discotic Nematic Liquid Crystals as Soft Ambipolar Semiconductors. [PDF]
Ashy +4 more
europepmc +1 more source
Phase‐Pure and Size‐Tunable Tin Halide Perovskite Quantum Dots
A trioctylphosphine oxide modulated protocol allows for the synthesis and study of the optical properties of a broad library of tin halide perovskite quantum dots across multiple A‐ and X‐site compositions with precise size tuning while eliminating unwanted 2D phases.
Ole F. Dressler +7 more
wiley +1 more source
Activating Phase-Transition Toughening in van der Waals Semiconductor GaTe. [PDF]
Xu R +13 more
europepmc +1 more source
Laser‐Assisted Phase Engineering of 2D MoS2 for Efficient Solution‐Processed Electronics
Here, local laser‐assisted phase transition from solution‐processed phase‐pure 1T′ to 2H MoS2 is shown to critically depend on the irradiation atmosphere. While processing in air leads to damaged insulating regions, inert conditions yield semiconducting 2H domains, enabling direct field‐effect transistor patterning with optimized lateral 1T′‐2H MoS2 ...
Anna Zhuravlova +10 more
wiley +1 more source
Computational and experimental pathways to next-generation ultrawide-band-gap oxide semiconductors. [PDF]
Chae S +5 more
europepmc +1 more source

