Results 151 to 160 of about 931,753 (278)
Coarse‐grained (left) and atomistic (right) models of the shape memory polymer ESTANE ETE 75DT3 are shown schematically. The two representations bridge molecular detail and mesoscopic description. Both models capture shape memory behavior, linking segmental mobility and conformational relaxation of anisotropic chains to macroscopic recovery, and ...
Fathollah Varnik
wiley +1 more source
In-Sensor-Memory Computing for Post-Von Neumann Intelligence: A Perspective. [PDF]
Tang H, Yu N, Min P, Guo R, Zhang G.
europepmc +1 more source
Toward memristive in-memory computing: principles and applications. [PDF]
Bao H +15 more
europepmc +1 more source
Photoswitchable Conductive Metal–Organic Frameworks
A conductive material where the conductivity can be modulated remotely by irradiation with light is presented. It is based on films of conductive metal–organic framework type Cu3(HHTP)2 with embedded photochromic molecules such as azobenzene, diarylethene, spiropyran, and hexaarylbiimidazole in the pores.
Yidong Liu +5 more
wiley +1 more source
High-clockrate free-space optical in-memory computing. [PDF]
Liang Y +14 more
europepmc +1 more source
High-Performance On-Chip Racetrack Resonator Based on GSST-Slot for In-Memory Computing. [PDF]
Zhu H, Lu Y, Cai L.
europepmc +1 more source
This study uncovers the unexplored role of intermolecular interactions in multiphoton absorption in coordination polymers. By analyzing [Zn2tpda(DMA)2(DMF)0.3], it shows how the electronic coupling of the chromophores and confinement in the MOF enhance two‐and three‐photon absorption.
Simon Nicolas Deger +11 more
wiley +1 more source
Achieving high precision in analog in-memory computing systems. [PDF]
Mannocci P +3 more
europepmc +1 more source
Laterally gated ferroelectric field effect transistor (LG-FeFET) using α-In2Se3 for stacked in-memory computing array. [PDF]
Park S, Lee D, Kang J, Choi H, Park JH.
europepmc +1 more source
An all‐in‐one analog AI accelerator is presented, enabling on‐chip training, weight retention, and long‐term inference acceleration. It leverages a BEOL‐integrated CMO/HfOx ReRAM array with low‐voltage operation (<1.5 V), multi‐bit capability over 32 states, low programming noise (10 nS), and near‐ideal weight transfer.
Donato Francesco Falcone +11 more
wiley +1 more source

