Results 171 to 180 of about 931,753 (278)

Device quantization policy in variation-aware in-memory computing design. [PDF]

Sci Rep, 2022
Chang CC, Li ST, Pan TL, Tsai CM, Wang IT, Chang TS, Hou TH.   +6 more
europepmc   +1 more source

Photoswitching Conduction in Framework Materials

Advanced Functional Materials, EarlyView.
This mini‐review summarizes recent advances in state‐of‐the‐art proton and electron conduction in framework materials that can be remotely and reversibly switched on and off by light. It discusses the various photoswitching conduction mechanisms and the strategies employed to enhance photoswitched conductivity.
Helmy Pacheco Hernandez, Stefan Hecht, Wolfgang Wenzel, Lars Heinke, Mariana Kozlowska   +4 more
wiley   +1 more source

Recent advances in ferroelectric materials, devices, and in-memory computing applications. [PDF]

Nano Converg
Hwang H, Youn S, Kim H.
europepmc   +1 more source

Synergistic Approach of Interfacial Layer Engineering and READ-Voltage Optimization in HfO₂-Based FeFETs for In-Memory-Computing Applications. [PDF]

ACS Appl Electron Mater, 2022
Raffel Y, De S, Lederer M, Olivo RR, Hoffmann R, Thunder S, Pirro L, Beyer S, Chohan T, Kämpfe T, Seidel K, Heitmann J.   +11 more
europepmc   +1 more source

Emergent Spin‐Glass Behavior in an Iron(II)‐Based Metal–Organic Framework Glass

Advanced Functional Materials, EarlyView.
A one‐pot, solvent‐free synthesis yields an Fe2+‐based metal‐organic framework (MOF) glass featuring a continuous random network structure. The material exhibits spin‐glass freezing at 14 K, driven by topological‐disorder and short‐range magnetic frustration, showcasing the potential of MOF glasses as a plattform for cooperative magnetic phenomena in ...
Chinmoy Das, Soma Salamon, Joachim Landers, Jan‐Benedikt Weiß, Wen‐Long Xue, Pascal Kolodzeiski, Roman Pallach, Heiko Wende, Sebastian Henke   +8 more
wiley   +1 more source

High-throughput design of optoelectronic-ferroelectric heterostructure from materials to sensor-memory-computing devices. [PDF]

Natl Sci Rev
Zhong G, Yan J, Tang M, Deng H, Tan Y, Zhong X, Li C, Fan Z, Wang J, Li J.   +9 more
europepmc   +1 more source

An energy-efficient in-memory computing architecture for survival data analysis based on resistive switching memories. [PDF]

Front Neurosci, 2022
Baroni A, Glukhov A, Pérez E, Wenger C, Calore E, Schifano SF, Olivo P, Ielmini D, Zambelli C.   +8 more
europepmc   +1 more source

Nanoscale Mapping of Plasmonic Charge Transport in Nano‐Resonators Based on Resistive Switching Materials

Advanced Functional Materials, EarlyView.
In this strategy, a conductive nano‐probe is employed to induce nanoscale phase transitions and map the nanoscale conductivity and trap density of GST films. By utilizing the contrasting properties of phase‐change states, nano‐resonators are fabricated that exhibit plasmonic conduction and dramatically different transport characteristics.
Sunwoo Bang, Seunghyo Park, Shashank Shekhar, Yuhyeon Oh, Seunghun Hong   +4 more
wiley   +1 more source

In-Memory-Computing Realization with a Photodiode/Memristor Based Vision Sensor. [PDF]

Materials (Basel), 2021
Vasileiadis N, Ntinas V, Sirakoulis GC, Dimitrakis P.   +3 more
europepmc   +1 more source

Predicting Atomic Charges in MOFs by Topological Charge Equilibration

Advanced Functional Materials, EarlyView.
An atomic charge prediction method is presented that is able to accurately reproduce ab‐initio‐derived reference charges for a large number of metal–organic frameworks. Based on a topological charge equilibration scheme, static charges that fulfill overall neutrality are quickly generated.
Babak Farhadi Jahromi, Sumukh Shankar Sharadaprasad, Rochus Schmid   +2 more
wiley   +1 more source