Results 171 to 180 of about 115,019,574 (294)

Room-temperature ferroelectrically switchable quantum geometry in few-layer WTe₂ for complementary in-memory computing. [PDF]

Nat Commun
Wang R, Wang P, Chen H, Peng Y, Liu B, Xiong J, Zhang X, Pan C, Chen X, Yang SA, Liang SJ, Miao F, Song P.   +12 more
europepmc   +1 more source

First demonstration of in-memory computing crossbar using multi-level Cell FeFET. [PDF]

Nat Commun, 2023
Soliman T, Chatterjee S, Laleni N, Müller F, Kirchner T, Wehn N, Kämpfe T, Chauhan YS, Amrouch H.   +8 more
europepmc   +1 more source

Achieving High ON State Current through Ferroelectric Polarization‐Dependent Interfacial Resistance Switching in Undoped Orthorhombic HfO2 Films

Advanced Functional Materials, EarlyView.
Ferroelectric tunnel junction devices based on epitaxial undoped ferroelectric HfO2 films demonstrate stable switching endurance of over 106 switching cycles, low write voltages of ±3 V, 16 measured resistance states, and neuromorphic capability.
Markus Hellenbrand, Nuno Estrócio, Ji S. Kim, Babak Bakhit, Marian C. Istrate, Corneliu Ghica, Tiago Rebelo, Nives Strkalj, Abin Varghese, Bernardo Almeida, Luís S. Marques, Bipin Rajendran, Judith L. MacManus‐Driscoll, José P. B. Silva   +13 more
wiley   +1 more source

Ultrafast non-volatile charge storage and mid-infrared photoluminescence in LuminoMem tellurium devices for in-memory computing. [PDF]

Nat Commun
Liang D, Wang S, Wang Y, Li D, Chen Y, Cheng B, Qin M, Yang D, Sheng J, Liu H, Li L, Zeng C, Sun D, Pan A, Liu J.   +14 more
europepmc   +1 more source

Cellular automata imbedded memristor-based recirculated logic in-memory computing. [PDF]

Nat Commun, 2023
Liu Y, Tian H, Wu F, Liu A, Li Y, Sun H, Lanza M, Ren TL.   +7 more
europepmc   +1 more source

Electrode and Microstructure Dependence of Oxygen Diffusion in Ferroelectric Hafnium Zirconium Oxide Thin Films

Advanced Functional Materials, EarlyView.
Significant nanoscale oxygen diffusion coefficient variations are measured in ferroelectric hafnium zirconium oxide films with grain boundaries and electrode interfaces exhibiting values 104 times larger than the grain cores. Overall coefficients are 10X larger for films prepared with metal nitride electrodes compared to refractory metals. New insights
Liron Shvilberg, Thomas W. Pfeifer, Chuanzhen Zhou, Yong Kyu Choi, Duk‐Hyun Choe, Patrick E. Hopkins, Jon F. Ihlefeld   +6 more
wiley   +1 more source

High-clockrate free-space optical in-memory computing. [PDF]

Light Sci Appl
Liang Y, Wang J, Xue K, Ren X, Yin R, Ou S, Zhou L, Li Y, Heuser T, Heermeier N, Christen I, Lott JA, Reitzenstein S, Yu M, Chen Z.   +14 more
europepmc   +1 more source

Cascadable in-memory computing based on symmetric writing and readout. [PDF]

Sci Adv, 2022
Wang L, Xiong J, Cheng B, Dai Y, Wang F, Pan C, Cao T, Liu X, Wang P, Chen M, Yan S, Liu Z, Xiao J, Xu X, Wang Z, Shi Y, Cheong SW, Zhang H, Liang SJ, Miao F.   +19 more
europepmc   +1 more source

Historical Foundation and Practical Guideline for Ferroelectric Switching Kinetic Studies

Advanced Functional Materials, EarlyView.
The P and U pulses in the conventional PUND measurements are not identical because of the interplay between switching current and the measurement circuit components. This circuit effect can lead to a shift in polarization transients and misinterpreted physics in the switching kinetics.
Yi Liang, Pat Kezer, John T. Heron
wiley   +1 more source

Achieving high precision in analog in-memory computing systems. [PDF]

Npj Unconv Comput
Mannocci P, Larelli G, Bonomi M, Ielmini D.   +3 more
europepmc   +1 more source