Results 181 to 190 of about 118,830,318 (300)

Implantable Ionic Memristors Based on Natural Polymer Heterojunctions

Advanced Functional Materials, EarlyView.
We report an implantable natural polymer‐based ionic memristor composed of hyaluronic acid, chitosan, and PDMS. The device achieved 98.94% accuracy in MNIST classification while reducing training time by 36.8% compared with a conventional artificial neural network (ANN).
Dong‐yup Lee, Byung Ik Park, Gihyeon Yim, Hyunjae Yoo, Sangjun Ma, Jundong Park, Jeong‐Yun Sun   +6 more
wiley   +1 more source

Ultrafast non-volatile charge storage and mid-infrared photoluminescence in LuminoMem tellurium devices for in-memory computing. [PDF]

Nat Commun
Liang D, Wang S, Wang Y, Li D, Chen Y, Cheng B, Qin M, Yang D, Sheng J, Liu H, Li L, Zeng C, Sun D, Pan A, Liu J.   +14 more
europepmc   +1 more source

Cellular automata imbedded memristor-based recirculated logic in-memory computing. [PDF]

Nat Commun, 2023
Liu Y, Tian H, Wu F, Liu A, Li Y, Sun H, Lanza M, Ren TL.   +7 more
europepmc   +1 more source

Biodegradable and Biocompatible Functional Polymers for Biomedical Applications

Advanced Functional Materials, EarlyView.
Biodegradable and biocompatible functional polymers integrate electrical, mechanical, and stimuli‐responsive functionalities while enabling programmed degradation under physiological conditions. This review introduces recent advances in conductive, shape‐memory, self‐healing, photocurable, and adhesive polymer systems, emphasizing material design ...
Won Bae Han, Shuvra Mondal, Sungkeun Han, Chan‐Hwi Eom, Venkata Ramesh Naganaboina, Suk‐Won Hwang   +5 more
wiley   +1 more source

High-clockrate free-space optical in-memory computing. [PDF]

Light Sci Appl
Liang Y, Wang J, Xue K, Ren X, Yin R, Ou S, Zhou L, Li Y, Heuser T, Heermeier N, Christen I, Lott JA, Reitzenstein S, Yu M, Chen Z.   +14 more
europepmc   +1 more source

Cascadable in-memory computing based on symmetric writing and readout. [PDF]

Sci Adv, 2022
Wang L, Xiong J, Cheng B, Dai Y, Wang F, Pan C, Cao T, Liu X, Wang P, Chen M, Yan S, Liu Z, Xiao J, Xu X, Wang Z, Shi Y, Cheong SW, Zhang H, Liang SJ, Miao F.   +19 more
europepmc   +1 more source

Monolithic Oxidation Enables Ultrathin Vertically Graded Tantalum Oxide for Low‐Voltage, Low‐Variability Memristive Switching

Advanced Functional Materials, EarlyView.
Monolithic UV‐ozone oxidation of Ta forms an ultrathin Ta2O5/TaOx bilayer enabling resistive switching with a vertical defect gradient. A stoichiometric surface layer over an oxygen‐deficient sublayer promotes localized filament nucleation near the top interface, enabling low‐voltage operation, and reduced cycle‐to‐cycle variability.
Seunghoon Yang, Dong Hyun Lee, Conan Weiland, Won‐Il Lee, Kim Kisslinger, Mingzhao Liu, Aswin kumar Anbalagan, Xiao Tong, Soumyajit Mandal, Nikhil Tiwale, Houk Jang, Chang‐Yong Nam   +11 more
wiley   +1 more source

Achieving high precision in analog in-memory computing systems. [PDF]

Npj Unconv Comput
Mannocci P, Larelli G, Bonomi M, Ielmini D.   +3 more
europepmc   +1 more source

Multimode Oxide‐Based Optoelectronic Memtransistor for In‐Sensor Vision Processing

Advanced Functional Materials, EarlyView.
A multimode optoelectronic memtransistor (OEMT) is demonstrated for vision explainable artificial intelligence (VXAI) hardware. By integrating optical sensing, electrical masking, and non‐volatile memory, the device enables key operations required for generating saliency information.
Min Gu Lee, Geunyoung Kim, Hwa Young Kim, Do Hoon Kim, Hanchan Song, Huisu Noh, Jungwan Noh, Seungwoo Lee, Sang‐Hee Ko Park, Himchan Cho, Kyung Min Kim   +10 more
wiley   +1 more source

Accelerating hybrid XOR-CNF Boolean satisfiability problems natively with in-memory computing. [PDF]

Nat Commun
Im H, Böhm F, Pedretti G, Kushida N, Noori M, Valiante E, Zhang X, Yang CW, Bhattacharya T, Sheng X, Ignowski J, Heittmann A, Strachan JP, Mohseni M, Beausoleil R, Vaerenbergh TV, Rozada I.   +16 more
europepmc   +1 more source