Results 181 to 190 of about 115,019,574 (294)
We use scanning nitrogen vacancy magnetometry to directly image the weak in‐plane magnetic moments in mixed phase BiFeO3 at the nanoscale and quantify the local magnetic moments to be 18.8±2.0 μB/nm2 in the rhombohedral‐like phase and 1.5±0.6 μB/nm2 in the well‐known non‐magnetic tetragonal‐like phase.
Lei Wang +14 more
wiley +1 more source
Accelerating hybrid XOR-CNF Boolean satisfiability problems natively with in-memory computing. [PDF]
Im H +16 more
europepmc +1 more source
Toward memristive in-memory computing: principles and applications. [PDF]
Bao H +15 more
europepmc +1 more source
Advances in Sustainable and Wearable Textile Based Soft Robotics
This Review examines advances in wearable textile‐based soft robotics, focusing on sustainable materials, integrated sensing, and scalable actuation. It discusses manufacturing and system integration across healthcare, assistive robotics, prosthetics, and human–machine interfaces, and highlights key challenges in circular design, including life‐cycle ...
Zahir Abbas +6 more
wiley +1 more source
Characterization of non-volatile RRAMs for in memory computing
LAUREA MAGISTRALELa quantità sempre crescente di dati elaborati ogni giorno per via delle applicazioni dell’ Intelligenza Artificiale nell’era dell’Internet of Things ha messo a dura prova le prestazioni dei convenzionali computer digitali basati ...
INDELICATO, DEBORA
core
High-Performance On-Chip Racetrack Resonator Based on GSST-Slot for In-Memory Computing. [PDF]
Zhu H, Lu Y, Cai L.
europepmc +1 more source
Implantable Ionic Memristors Based on Natural Polymer Heterojunctions
We report an implantable natural polymer‐based ionic memristor composed of hyaluronic acid, chitosan, and PDMS. The device achieved 98.94% accuracy in MNIST classification while reducing training time by 36.8% compared with a conventional artificial neural network (ANN).
Dong‐yup Lee +6 more
wiley +1 more source
All-Optical Control of Bidirectional Polarization Switching in Ferroelectric Heterostructures for Neuromorphic and In-Memory Computing. [PDF]
Niu J +7 more
europepmc +1 more source
Laterally gated ferroelectric field effect transistor (LG-FeFET) using α-In2Se3 for stacked in-memory computing array. [PDF]
Park S, Lee D, Kang J, Choi H, Park JH.
europepmc +1 more source
Ferroelectric nanoclusters create local internal fields in a normally non‐switchable polar film because of polarization mismatch at their interfaces. That field opposes polarization in the regions with larger polarization and reinforces polarization in the regions with smaller polarization.
Anna N. Morozovska +5 more
wiley +1 more source

