Results 191 to 200 of about 931,753 (278)

Reconfigurable and Efficient Implementation of 16 Boolean Logics and Full-Adder Functions with Memristor Crossbar for Beyond von Neumann In-Memory Computing. [PDF]

Adv Sci (Weinh), 2022
Song Y, Wang X, Wu Q, Yang F, Wang C, Wang M, Miao X.   +6 more
europepmc   +1 more source

Intermediate Resistive State in Wafer‐Scale Vertical MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications

Advanced Functional Materials, EarlyView.
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa, Milan Buttberg, Ke Ran, Rana Walied Ahmad, Dennis Braun, Lukas Völkel, Jimin Lee, Sofía Cruces, Bart Macco, Bárbara Canto, Holger Lerch, Thorsten Wahlbrink, Holger Kalisch, Michael Heuken, Andrei Vescan, Joachim Mayer, Zhenxing Wang, Ilia Valov, Stephan Menzel, Max C. Lemme   +19 more
wiley   +1 more source

CMOS-compatible flash-gated thyristor-based neuromorphic module with small area and low energy consumption for in-memory computing. [PDF]

Sci Adv
Ko J, Im J, Kim J, Shin W, Koo RH, Park SH, Woo SY, Lee JH.   +7 more
europepmc   +1 more source

An in-memory computing architecture based on two-dimensional semiconductors for multiply-accumulate operations. [PDF]

Nat Commun, 2021
Wang Y, Tang H, Xie Y, Chen X, Ma S, Sun Z, Sun Q, Chen L, Zhu H, Wan J, Xu Z, Zhang DW, Zhou P, Bao W.   +13 more
europepmc   +1 more source

Sustainable Catalyst‐Free PLG Networks: Recyclability, Biodegradability, and Functional Performance

Advanced Functional Materials, EarlyView.
A catalyst‐additive free covalent adaptable network is developed from star‐shaped poly(lactide‐co‐glycolide) cross‐linked with pyromellitic dianhydride, enabling internal carboxylic acid‐driven transesterification. The resulting biodegradable network exhibits mechanical robustness (Young's modulus ≈1.6 GPa), complete recyclability, rapid biodegradation
Lars Schwarzer, Emilia Fulajtar, Seema Agarwal   +2 more
wiley   +1 more source

Integration of Low‐Voltage Nanoscale MoS2 Memristors on CMOS Microchips

Advanced Functional Materials, EarlyView.
This article presents the first monolithic integration of nanoscale MoS2‐based memristors into the back‐end‐of‐line of foundry‐fabricated CMOS microchips in a one‐transistor‐one‐resistor (1T1R) architecture. The MoS2‐based 1T1R cells exhibit forming‐free, nonvolatile resistive switching with ultra‐low operating voltages, low cycle‐to‐cycle variability ...
Jimin Lee, Sofía Cruces, Xiaohua Liu, Yang Chen, Vasilis A. Maroufidis, Janghyun Jo, Lukas Völkel, Dennis Braun, Michael Möller, Leon Brackmann, Holger Kalisch, Michael Heuken, Andrei Vescan, Rafal E. Dunin‐Borkowski, Joachim Mayer, Stefan Wiefels, Max C. Lemme   +16 more
wiley   +1 more source

Deep Bayesian active learning using in-memory computing hardware. [PDF]

Nat Comput Sci
Lin Y, Gao B, Tang J, Zhang Q, Qian H, Wu H.   +5 more
europepmc   +1 more source

A New Threshold Switching Device With Tunable Negative Differential Resistance Based on ErMnO3 Polymorphs

Advanced Functional Materials, EarlyView.
Polymorph engineering in ErMnO3 enables low‐voltage, forming‐free threshold switching with tunable negative differential resistance. Conducting orthorhombic regions embedded in an insulating hexagonal matrix provide controlled Joule‐heating‐enhanced Poole–Frenkel transport. The hexagonal phase prevents excessive heating and breakdown.
Rong Wu, Florian Maudet, Thanh Luan Phan, Wassim Hamouda, Richard Schroedter, Ahmet Samil Demirkol, Ronald Tetzlaff, Veeresh Deshpande, Catherine Dubourdieu   +8 more
wiley   +1 more source

The Role of Phase-Change Memory in Edge Computing and Analog In-Memory Computing: An Overview of Recent Research Contributions and Future Challenges. [PDF]

Sensors (Basel)
Antolini A, Zavalloni F, Lico A, Quqa S, Greco L, Mangia M, Pareschi F, Pasotti M, Franchi Scarselli E.   +8 more
europepmc   +1 more source

2D Magnetic and Topological Quantum Materials and Devices for Ultralow Power Spintronics

Advanced Functional Materials, EarlyView.
2D magnets and topological quantum materials enable ultralow‐power spintronics by combining robust magnetic order with symmetry‐protected, Berry‐curvature‐driven transport. Fundamentals of 2D anisotropy and spin‐orbit‐coupling induced band inversion are linked to scalable growth and vdW stacking.
Brahmdutta Dixit, Yifei Yang, Shawn Li, Yu‐Chia Chen, Qi Jia, Jian‐Ping Wang   +5 more
wiley   +1 more source