Results 41 to 50 of about 1,365,567 (352)

Technique for producing highly planar Si/SiO0.64Ge0.36/Si metal–oxide–semiconductor field effect transistor channels [PDF]

open access: yes, 1999
Si/Si0.64Ge0.36/Si heterostructures have been grown at low temperature (450 °C) to avoid the strain-induced roughening observed for growth temperatures of 550 °C and above.
A. P. Knights   +11 more
core   +1 more source

Impregnate Carbonation: CO2‐Guided In Situ Growth of Robust Superhydrophobic Structures on Concrete Surfaces

open access: yesAdvances in Materials
Superhydrophobic surfaces applying on concrete can greatly improve the durability of concrete by preventing the damage from water. However, traditional design of superhydrophobic concrete surfaces by external coating encounters to problems of flaking and
Long Jiang   +6 more
semanticscholar   +1 more source

Post-growth annealing of GaMnAs under As capping - an alternative way to increase Tc

open access: yes, 2004
We demonstrate that in situ post-growth annealing of GaMnAs layers under As capping is adequate for achieving high Curie temperatures (Tc) in a similar way as ex situ annealing in air or in N2 atmosphere practiced earlier.Comment: 13 pages, 4 ...
Adell, M.   +9 more
core   +3 more sources

Nearly strain-free heteroepitaxial system for fundamental studies of pulsed laser deposition: EuTiO3 on SrTiO3

open access: yes, 2004
High quality epitaxial thin-films of EuTiO3 have been grown on the (001) surface of SrTiO3 using pulsed laser deposition. In situ x-ray reflectivity measurements reveal that the growth is two-dimensional and enable real-time monitoring of the film ...
Aaron Fleet   +9 more
core   +1 more source

High In-content InGaN layers synthesized by plasma-assisted molecular-beam epitaxy: growth conditions, strain relaxation and In incorporation kinetics

open access: yes, 2014
We report the interplay between In incorporation and strain relaxation kinetics in high-In-content InxGa1-xN (x = 0.3) layers grown by plasma-assisted molecular-beam epitaxy.
A. Núñez-Cascajero   +10 more
core   +2 more sources

Reflection electron energy loss spectroscopy during initial stages of Ge growth on Si by molecular beam epitaxy [PDF]

open access: yes, 1991
Using a conventional reflection high-energy electron diffraction gun together with an electron energy loss spectrometer, we have combined in situ measurements of inelastic scattering intensities from Si L2,3 and Ge L2,3 core losses with reflection ...
Ahn, Channing C., Atwater, Harry A.
core   +1 more source

A Suspended Nanogap Formed by Field-Induced Atomically Sharp Tips [PDF]

open access: yes, 2012
A sub-nanometer scale suspended gap (nanogap) defined by electric field-induced atomically sharp metallic tips is presented. A strong local electric field (\u3e109 V=m) across micro/nanomachined tips facing each other causes the metal ion migration in ...
Han, Jun Hyun   +4 more
core   +2 more sources

Organoids in pediatric cancer research

open access: yesFEBS Letters, EarlyView.
Organoid technology has revolutionized cancer research, yet its application in pediatric oncology remains limited. Recent advances have enabled the development of pediatric tumor organoids, offering new insights into disease biology, treatment response, and interactions with the tumor microenvironment.
Carla Ríos Arceo, Jarno Drost
wiley   +1 more source

In Situ Growth of Cyclodextrin‐Based Metal Organic Framework Air Filters for Reusable SO2 Adsorbent Applications

open access: yesMacromolecular Materials and Engineering, 2023
In situ growth of cyclodextrin‐based metal‐organic frameworks (CD‐MOFs) is investigated for the effective fabrication of MOF composites through the vapor diffusion method combined with O2 plasma treatment.
Juran Kim, Jinwook Lee, Jooyoun Kim
doaj   +1 more source

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