Results 101 to 110 of about 8,754 (215)

Study of the electronic structure of indium gallium phosphide In0.5Ga0.5P nanocrystals

Iraqi Journal of Physics, 2012
The electronic structure of zinc blend indium gallium phosphide In0.5Ga0.5P nanocrystals which have dimension (2-2.8 nm) is investigated using the density functional theory coupled with large unit cell (LUC) for the different size core (8 ,16,54,64 ...
Thekra Kasim, Mohammed T. Hussein, Mudar A. Abdulsattar   +2 more
doaj  

Performance of a Double Gate Nanoscale MOSFET (DG-MOSFET) Based on Novel Channel Materials [PDF]

Журнал нано- та електронної фізики, 2013
In this paper, we have studied a double gate nanoscale MOSFET for various channel materials using simulation approach. The device metrics considered at the nanometer scale are subthreshold swing (SS), drain induced barrier lowering (DIBL), on and off ...
Rakesh Prasher, Devi Dass, Rakesh Vaid   +2 more
doaj  

Study of the defect evolution with Fe content in semi-insulating InP by photoinduced current transient spectroscopy

, 1994
The evolution of defects in liquid encapsulation Czochralski grown indium phosphide with different iron concentrations was investigated by the use of photoinduced current transient spectroscopy.
A. Zerrai, R. Fornari, G. Marracki
core  

Anisotropic mechanical behavior of Zincblende and Wurtzite indium phosphide nanowires

Next Materials
Of late, indium phosphide (InP) nanowires (NWs) have garnered significant attention as foundational components for next-generation nanoelectronics, optoelectronics, and electromechanical devices, owing to their exceptional semiconducting and optical ...
Md. Din Islam, A.S.M. Jannatul Islam, Abdullah Ahmed, J.M. Rubayat Dhrubo   +3 more
doaj   +1 more source

Microsecond infrared beam bending in photorefractive iron doped indium phosphide

, 2013
International audienceA time resolved study of the behavior of a single beam in photorefractive iron doped indium phosphide is provided down to the microsecond range, showing that infrared beam bending does occur on the microsecond time scale for ...
Fressengeas, Nicolas, Wolfersberger, Delphine, Dan, Cristian   +2 more
core   +1 more source

Indium Phosphide Integrated Photonics in Membranes

, 2018
Integrating electronic and photonic functions has become a major issue in the last decade. This integration requires small photonic circuits that are compatible with CMOS processing.
Smit, M.K., Jiao, Y Yuqing, van der Tol, J.J.G.M., Jiao, Y., Millan-Mejia, AJ, Shen, L., Shen, L Longfei, Pogoretskii, V Vadim, Millan-Mejia, A.J., van Engelen, J.P., Pogoretskiy, V., Tol, JJGM Jos van der, Engelen, JP Jorn van, Smit, MK Meint   +13 more
core   +1 more source

Nephrotoxicity Evaluation of Indium Phosphide Quantum Dots with Different Surface Modifications in BALB/c Mice. [PDF]

Int J Mol Sci, 2020
Li L, Chen T, Yang Z, Chen Y, Liu D, Xiao H, Liu M, Liu K, Xu J, Liu S, Wang X, Lin G, Xu G.   +12 more
europepmc   +1 more source

Indium phosphide based photodiodes for mid-wave infrared detection

, 2005
Mid-wave infrared (MWIR) photodetectors are used in many military and civil applications. Focal plane arrays made of these detectors are used for thermal imaging.
Sidhu, Rubin
core  

RAMAN SPECTROSCOPIC STUDIES OF ION-IMPLANTED GALLIUM-ARSENIDE AND INDIUM-PHOSPHIDE (OPTICAL, III-V, SEMICONDUCTOR).

, 1984
RAMAN SPECTROSCOPIC STUDIES OF ION-IMPLANTED GALLIUM-ARSENIDE AND INDIUM-PHOSPHIDE (OPTICAL, III-V, SEMICONDUCTOR)
CHALLASREE S. RAMA. RAO (7983527)
core  

RAMAN SPECTROSCOPIC STUDIES OF ION-IMPLANTED GALLIUM-ARSENIDE AND INDIUM-PHOSPHIDE (OPTICAL, III-V, SEMICONDUCTOR).

, 2014
RAMAN SPECTROSCOPIC STUDIES OF ION-IMPLANTED GALLIUM-ARSENIDE AND INDIUM-PHOSPHIDE (OPTICAL, III-V, SEMICONDUCTOR)
CHALLASREE S. RAMA. RAO (7983527)
core