Results 121 to 130 of about 8,754 (215)

Indium Phosphide Photonic Integrated Circuits for Free Space Optical Links. [PDF]

IEEE J Sel Top Quantum Electron, 2018
Zhao H, Pinna S, Song B, Megalini L, Brunelli STŠ, Coldren LA, Klamkin J.   +6 more
europepmc   +1 more source

Evaluation of indium phosphide surface barrier detector using gamma rays

, 1999
774-777Liquid Encapsulated Czochralski (LEC) grown Fe doped indium phosphide (InP) surface barrier detector of thickness 350μm has been fabricated and electrical characteristics have been analysed.
Jhingan, A, Avasthi, D K, Ghosh, S, Asokan, K, Sugathan, P, Jayavel, P, Kumar, J   +6 more
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Indium Phosphide Single Crystal Furnace Cooling Crystallization Temperature Control Model Research. [PDF]

ACS Omega
Huang G, Ma S, Wei H, Wan H, Chen D.
europepmc   +1 more source

Stokes-Shift-Engineered Indium Phosphide Quantum Dots for Efficient Luminescent Solar Concentrators. [PDF]

ACS Appl Mater Interfaces, 2018
Sadeghi S, Bahmani Jalali H, Melikov R, Ganesh Kumar B, Mohammadi Aria M, Ow-Yang CW, Nizamoglu S.   +6 more
europepmc   +1 more source

Fifth international conference on indium phosphide and related materials.

, 1993
Post-deadline ...
International conference on Indium phosphide and related materials5thApril 19-22, 1993Paris
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Bandgap Engineering of Indium Phosphide-Based Core/Shell Heterostructures Through Shell Composition and Thickness. [PDF]

Front Chem, 2018
Toufanian R, Piryatinski A, Mahler AH, Iyer R, Hollingsworth JA, Dennis AM.   +5 more
europepmc   +1 more source

Unraveling Electron Dynamics in p-type Indium Phosphide (100): A Time-Resolved Two-Photon Photoemission Study. [PDF]

J Am Chem Soc
Diederich J, Velasquez Rojas J, Zare Pour MA, Ruiz Alvarado IA, Paszuk A, Sciotto R, Höhn C, Schwarzburg K, Ostheimer D, Eichberger R, Schmidt WG, Hannappel T, van de Krol R, Friedrich D.   +13 more
europepmc   +1 more source

Indium Phosphide MOS Transistor Fabrication and Characterization

, 1986
Program year: 1985/1986Digitized from print original stored in HDRAn anodic method of forming an insulator on Indium Phosphide for use in the fabrication of MOS devices is examined.
Pylant, Chris D.
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Pressure effect on impurity local vibrational mode and phase transitions in n-type iron-doped indium phosphide. [PDF]

Sci Rep, 2018
Lin CM, Hsu IJ, Lin SC, Chuang YC, Chen WT, Liao YF, Juang JY.   +6 more
europepmc   +1 more source

Novel indium phosphide charged particle detector characterization with a 120 GeV proton beam

Thin film detectors which incorporate semiconductor materials other than silicon have the potential to build upon their unique material properties and offer advantages such as faster response times, operation at room temperature, and radiation hardness ...
Jadhav, Manoj B., Metcalfe, Jessica E., Sumant, Anirudha V., Kim, Sungjoon, Berry, Vikas   +4 more
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