The electron mobility in indium phosphide.
, 1988 Hall effect and resistivity measurements have been carried out as a function of hydrostatic pressure and temperature on a number of samples of indium phosphide ranging from exceptionally pure to highly doped. In the case of pure and lightly doped InP an iterative solution of the Boltzmann Equation has been used successfully to describe the temperature ...
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PEGylation of indium phosphide quantum dots prevents quantum dot mediated platelet activation.
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