Lewis basic Pt₂(μ-Se)₂(PPh₃)₄reacts with In(ClO₄)₃ to give a rare platinum–indium selenido aggregate, {[Pt₂(μ₃-Se₂)₂(PPh₃)₄]₂In₂(μ-Se)₂}{ClO₄}₂. Single-crystal X-ray diffraction analysis revealed a hexametallic framework supported by a planar {In₂Se₂ ...
Yeo, J.S.L. +9 more
core +1 more source
Solution‐Based Processing of Optoelectronically Active Indium Selenide
AbstractLayered indium selenide (InSe) presents unique properties for high‐performance electronic and optoelectronic device applications. However, efforts to process InSe using traditional liquid phase exfoliation methods based on surfactant‐assisted aqueous dispersions or organic solvents with high boiling points compromise electronic properties due ...
Joohoon Kang +7 more
openaire +3 more sources
Uniaxial Strain Dependence on Angle-Resolved Optical Second Harmonic Generation from a Few Layers of Indium Selenide. [PDF]
Li ZY +9 more
europepmc +1 more source
Electrical and photovoltaic properties of indium‐tin‐oxide/p‐InSe/Au solar cells
Conditions for efficiency improvement and optimization in indium‐tin‐oxide/p‐indium‐selenide solar cells are discussed in this paper. This aim is achieved by using low‐resistivity p‐indium‐selenide and by incorporating a back‐surface‐field contact.
Martínez Pastor, Juan Pascual +3 more
core +1 more source
Point Defects in Two-Dimensional Indium Selenide as Tunable Single-Photon Sources. [PDF]
Salomone M +3 more
europepmc +1 more source
CuInSe2 quantum dots grown by molecular beam epitaxy on amorphous SiO2 surfaces
The currently most efficient polycrystalline solar cells are based on the Cu(In,Ga)Se2 compound as a light absorption layer. However, in view of new concepts of nanostructured solar cells, CuInSe2 nanostructures are of high interest.
Henrique Limborço +8 more
doaj +1 more source
Synthesis of CuInSe2 thin films from electrodeposited Cu11In9 precursors by two-step annealing
In this study, copper indium selenide (CIS) films were synthesized from electrodeposited Cu-In-Se precursors by two-step annealing. The agglomeration phenomenon of the electrodeposited In layer usually occurred on the Cu surface.
Tsung-Wei Chang, Shao-Yu Hu, Wen-Hsi Lee
doaj +1 more source
Annealing effect on I-V characteristic of n-ZnO – p-InSe heterojunction
The article is devoted to studying of influence of vacuum low-temperature annealing on the electrical and photoelectric characteristics of n-ZnO-p-InSe heterostructure. Indium monoselenide (InSe) is a semiconductor of the A3B6 group of layered compounds.
Z. D. Kovalyuk +5 more
doaj +1 more source
Direct Observation of Band Gap Renormalization in Layered Indium Selenide
Manipulation of intrinsic electronic structures by electron or hole doping in a controlled manner in van der Waals layered materials is the key to control their electrical and optical properties.
Christine Giorgetti (1749607) +23 more
core +1 more source
Sensor for monitoring processes of formation and strength development in binding media
Studies were carried out on the strain and pressure sensitivity of layered low-dimensional А3В6-type single crystals. The baric sensitivity coefficient for indium selenide (InSe) single crystals is 10−8−10−7 Pa−1, and the strain sensitivity is 103−104 ...
L. M. Zaichenko +3 more
doaj

