Results 91 to 100 of about 80,540 (198)

Point Defects in Two-Dimensional Indium Selenide as Tunable Single-Photon Sources. [PDF]

J Phys Chem Lett, 2021
Salomone M, Re Fiorentin M, Cicero G, Risplendi F.   +3 more
europepmc   +1 more source

Sensor for monitoring processes of formation and strength development in binding media

Технологія та конструювання в електронній апаратурі, 2004
Studies were carried out on the strain and pressure sensitivity of layered low-dimensional А3В6-type single crystals. The baric sensitivity coefficient for indium selenide (InSe) single crystals is 10−8−10−7 Pa−1, and the strain sensitivity is 103−104 ...
L. M. Zaichenko, A. I. Serediuk, V. D. Fotiy, Yu. F. Shevchuk   +3 more
doaj  

Fixed-Bed Adsorption of Gallium and Indium from EoL CIGS Leachates on Extractant-Mesoporous Carbon: Integrated Experimental Simulation Approach

Surfaces
Although the exponential increase in photovoltaic installations does contribute to mitigating climate change, it has posed the problem of photovoltaic (PV) residue. As PV panels contain strategic metals, their recovery has become a priority.
Víctor Ramos, Alejandra Vázquez Adán, Arturo Jiménez, Rubén Miranda, Eduardo Díez, Araceli Rodríguez   +5 more
doaj   +1 more source

Effect of Different Photovoltaic Materials on Energetic and Exergetic Performance of Photovoltaic Thermal Arrays

MATEC Web of Conferences, 2017
The study presents the effect of packing factor of Photovoltaic (PV) module on the room temperature, cell temperature and efficiency of a proposed Building Integrated Semi-transparent Photovoltaic Thermal (BiSPVT) and Building Integrated Opaque ...
Rajoria C.S., Gupta Pankaj Kumar, Agrawal Sanjay, Tiwari G.N., Singh D.   +4 more
doaj   +1 more source

"Effects of thermal annealing on optical absorption of amorphous indium selenide thin films"

, 1987
The thermal annealing behaviour of optical absorption in amorphous indium selenide thin films is investigated in the visible spectral range. Annealing is performed at different temperatures and for different periods of time.
DI GIULIO M, SICILIANO P, TEPORE, Antonio, MANNO, Daniela Erminia, RELLA R   +4 more
core   +1 more source

Electrolytic Recovery of Indium from Copper Indium Gallium Selenide Photovoltaic Panels: Preliminary Investigation of Process Parameters

Recycling
The European Green Deal emphasizes the development of renewable energy sources to combat climate change. However, as photovoltaic expansion accelerates, so does the potential for increased waste, necessitating effective material recycling strategies ...
Monika Gajec, Anna Król, Jadwiga Holewa-Rataj, Ewa Kukulska-Zając, Tomasz Kuchta   +4 more
doaj   +1 more source

Stress-induced phase-alteration in solution processed indium selenide thin films during annealing. [PDF]

RSC Adv, 2021
Mondal BK, Mostaque SK, Islam MA, Hossain J, Hossain J.   +4 more
europepmc   +1 more source

Incorporation of copper into indium gallium selenide layers from solution [PDF]

, 2008
A chemical method for the incorporation of copper into indium gallium selenide (IGS) layers has been developed. The resulting copper-containing precursor layers have been annealed in the presence of selenium vapour with the goal of forming Cu(In, Ga)Se2 (
J. Ganchev (7210802), K.E. Ernits (7207595), M. Kaelin (7163015), Christopher J. Hibberd (7163009), A.N. Tiwari (7163024)   +4 more
core   +2 more sources

Električna i fotoelektrična svojstva indium selenida

Fizika : a journal of experimental and theoretical physics, 1970
Electrical conductivity, photoconductivity and X-ray measurements have been performed on indium selenide single crystals. It bas been shown that the sample preparation procedure has great influence on the measured properties of InSe. The intrinsic energy gap from conductivity measurements was 0.95 eV and from photoconductive spectral response 1.18 eV ...
Čelustka, B., Peršin, A., Bidjin, D.
openaire   +2 more sources

Study of Schottky Barrier Height of Metals/Indium Selenide interface

, 2019
Metal-semiconductor contact is a key factor which affects the performance and stability of devices. Thus, improvement of metal contact is imperative in semiconductor devices design and fabrication.
Peng , Yu-Ting
core