Results 91 to 100 of about 246,221 (232)

Effect of Inductively Coupled Plasma Etching Parameters on n-Al0.5Ga0.5N Ohmic Contact

open access: yesIEEE Photonics Journal
High-Al-content n-AlGaN ohmic contact is very important for deep ultraviolet optoelectrical devices. However, it often suffers from the etching damages formed in inductively coupled plasma (ICP) etching.
Shanshan Yang   +10 more
doaj   +1 more source

INDUCTIVELY COUPLED PLASMA AND ATOMIC FLUORESCENCE SPECTROMETRY

open access: yesReviews in Analytical Chemistry, 1981
Omenetto, N., Cavalli, P., Rossi, G.
doaj   +1 more source

Evaluation of H2 Plasma‐Induced Damage in Materials for EUV Lithography

open access: yesAdvanced Materials Interfaces
Ultrafine semiconductor fabrication by lithography has undergone a significant transition from deep ultraviolet (DUV) to extreme ultraviolet (EUV) processes, which presents new challenges.
Eun‐Seok Choe   +9 more
doaj   +1 more source

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