Results 201 to 210 of about 246,221 (232)

Inductively Coupled Plasmas (ICPs)

2003
Inductively Coupled Plasmas are so called because the RF electric field is induced in the plasma by an external antenna. ICPs have two main advantages: 1) no internal electrodes are needed as in capacitively coupled systems, and 2) no dc magnetic field is required as in ECR reactors.
Jane P. Chang, Francis F. Chen
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Bistability and Hysteresis in Inductively Coupled Plasmas

Physica Scripta, 2000
The transition between the two stable operation regimes (E and H discharge modes) in inductively coupled argon plasmas has been studied experimentally and theoretically. Analogy with other physical phenomena exhibiting hysteresis has been drawn. Analysis of power balance, electromagnetic field, plasma parameters, densities of the excited states, and ...
Ostrikov, K., Xu, S., Lee, S.
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Induction-Coupled Plasma Torch

Journal of Applied Physics, 1961
A new method of generating a stable plasma at atmospheric pressure using inductive coupling at a frequency of several Mc is described. Methods of starting and operating this plasma in argon, and mixtures of argon with helium, hydrogen, oxygen, and air are discussed.
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Inductively coupled plasma nitriding of aluminium

Applied Surface Science, 2002
Substrates of aluminium alloy 2011 were plasma nitrided using an inductively coupled plasma source. The plasma nitriding parameters of temperature, length of nitriding and negative dc bias of the substrates were varied in order to optimise the plasma nitriding process. Substrates were characterised by powder X-ray diffraction (XRD), X-ray photoelectron
Giuseppe P Cavallaro, Sabina Gredelj, Sunil Kumar, Andrea R. Gerson   +3 more
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Induction coupled plasma processing

IEE Colloquium on Recent Advances in Micromaching Techniques, 1997
Summary form only given. Low pressure plasma micro-machining etches require rates and mask selectivities far greater than those normally associated with microelectronic device fabrication. Induction coupled plasma generation with separate rf bias applied to the substrate is an appropriate strategy for process pressures around 1 Pa.
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Nonlocal Power Deposition in Inductively Coupled Plasmas

Physical Review Letters, 2001
Physical Review ...
John D. Evans, Francis F. Chen
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Inductively coupled plasma for graphene production

2015 IEEE International Conference on Plasma Sciences (ICOPS), 2015
This study is investigating the direct growth of graphene on a membrane filter and a copper surface by injecting ethanol vapor into an inductively coupled plasma (ICP) at atmospheric pressure. Low temperature (
Yakup Durmaz, Sabah Nore, Ferhat Bozduman, I. Umran Koc, Mohammed Ismael, Lutfi Oksuz, Ali Gulec   +6 more
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Analyte ionization in the inductively coupled plasma

Spectrochimica Acta Part B: Atomic Spectroscopy, 1985
Abstract Spatially resolved ion-atom emission intensity ratios for Sr, Ca, Mg, Cd and Zn have been measured at rf power settings of 1.00, 1.25, 1.50, 1.75 and 2.0 kW at a vertical height of 16 mm above the load coil. Measured values of electron density have been used to construct a theoretical local thermal equilibrium (LTE) framework, and ion-atom ...
Michael W. Blades, B.L. Caughlin
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Modeling of the Inductive Coupled Plasma Discharges

ECS Transactions, 2010
Inductively Coupled Plasma Discharges (ICP) currently are considered as the main tool for plasma processing in the microelectronics industry. A comprehensive understanding of ICP's functionality and behavior is fundamental for the evolution of this technology. This understanding requires its modeling as an electrical lumped circuit. Existing electrical
Robson Vieira, S.M. Balashov, Stanislav A. Moshkalev   +2 more
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On nonlocal heating in inductively coupled plasmas

Plasma Sources Science and Technology, 2002
A simple analytic model describing nonlocal (anomalous) electron heating in inductively coupled plasmas (ICPs) is developed. The model takes into account both collisionless (nonlocal) and collisional effects, and is thus valid for all collisionality regimes.
Tyshetskiy Yu.O., Smolyakov A.I., Godyak V.A.   +2 more
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