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We review breakthroughs in the area of mid-infrared laser development. We summarize 2009 research across a broad range of mid-infrared laser technologies, including bulk solid-state lasers, fiber lasers, and nonlinear optics for the generation of ...
Timothy J. Carrig, Andrew M. Schober
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Mid-infrared InAs/InP quantum-dot lasers [PDF]
Mid-infrared semiconductor lasers operating in the 2.0–5.0 μm spectral range play an important role for various applications, including trace-gas detection, biomedical analysis, and free-space optical communication.
Yangqian Wang +26 more
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Development Progress of 3–5 μm Mid-Infrared Lasers: OPO, Solid-State and Fiber Laser
A 3–5 μm mid-infrared band is a good window for atmospheric transmission. It has the advantages of high contrast and strong penetration under high humidity conditions. Therefore, it has important applications in the fields of laser medicine, laser radar,
Tingwei Ren +5 more
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Near infrared lasers in flow cytometry. [PDF]
Technology development in flow cytometry has closely tracked laser technology, the light source that flow cytometers almost exclusively use to excite fluorescent probes. The original flow cytometers from the 1970s and 1980s used large water-cooled lasers to produce only one or two laser lines at a time.
Telford WG.
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Low-intensity red and infrared laser effects at high fluences on Escherichia coli cultures [PDF]
Semiconductor laser devices are readily available and practical radiation sources providing wavelength tenability and high monochromaticity. Low-intensity red and near-infrared lasers are considered safe for use in clinical applications. However, adverse
L.L. Barboza +4 more
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We present a difference frequency generator (DFG) based on a 2-mm-long MgO-doped aperiodically-poled lithium-niobate (APPLN) crystal with a linearly-varying poling-period.
Xi Feng +6 more
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Near-infrared laser spectroscopy of NiI [PDF]
Laser-induced fluorescence spectrum of NiI in the near infrared region of 714–770 nm has been recorded. Seven bands belonging to three electronic transition systems were observed and analyzed: the (0,0), (1,0), and (2,0) bands of [13.3] 2Σ+-A 2Π3/2 system; the (1,1) and (0,1) bands of [13.9] 2Π3/2-X 2Δ5/2 system; and the (0,0) and (1,0) bands of [13.9]
Ye, J, Tam, WS, Cheung, ASC
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Mid-infrared III–V semiconductor lasers epitaxially grown on Si substrates
There is currently much activity toward the integration of mid-infrared semiconductor lasers on Si substrates for developing a variety of smart, compact, sensors based on Si-photonics integrated circuits.
Eric Tournié +8 more
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Mid-infrared hyperchaos of interband cascade lasers
Chaos in nonlinear dynamical systems is featured with irregular appearance and with high sensitivity to initial conditions. Near-infrared light chaos based on semiconductor lasers has been extensively studied and has enabled various applications.
Yu Deng +7 more
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InAs-Based Quantum Cascade Lasers with Extremely Low Threshold
We report InAs-based quantum cascade lasers (QCLs) operating near 14 µm with a threshold current density Jth as low as 0.6 kA/cm2 at room temperature. The threshold obtained is lower than the Jth of the best reported InP-based QCLs to date without facet ...
Kumar Kinjalk +5 more
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