Results 141 to 150 of about 35,399 (274)

Improved Quality of InN Thin Films Using a Thin InGaN Compressive Strain Gradient Layer [PDF]

Satish Shetty, Andrian V. Kuchuk, Fernando Maia de Oliveira, Serhii Kryvyi, Chen Li, Paul Minor, Mohammad Zamani‐Alavijeh, Nirosh M. Eldose, Subhashis Das, Dinesh Baral, Yuriy I. Mazur, H. Alan Mantooth, Gregory J. Salamo   +12 more
openalex   +1 more source

Gallium Nitride for Space Photovoltaics: Properties, Synthesis Methods, Device Architectures and Emerging Market Perspectives. [PDF]

Micromachines (Basel)
Drabczyk A, Uss P, Bucka K, Bulowski W, Kasza P, Mazur P, Boguta E, Mazur M, Putynkowski G, Socha RP.   +9 more
europepmc   +1 more source

Demonstration of 651 nm InGaN-based red light-emitting diode with an external quantum efficiency over 6% by InGaN/AlN strain release interlayer

Kun Xing, Junwei Hu, Zhengwei Pan, Zhihu Xia, Zhengxian Jin, Liancheng Wang, Xiaolong Jiang, Haifeng Wang, Hong Zeng, Xiujuan Wang   +9 more
openalex   +1 more source

Advancing flexible optoelectronics with III-nitride semiconductors: from materials to applications. [PDF]

Light Sci Appl
Gao X, Huang Y, Wang R, Sun Y, Wang L.
europepmc   +1 more source

Making UV light visible by exciting polarization-gate phototransistor to achieve energy transfer into GaN-based blue emission. [PDF]

Light Sci Appl
Chu C, Jiang Y, He C, Li W, Tian K, Zhang Y, Sun X, Zhang ZH.   +7 more
europepmc   +1 more source

Surface electronic properties of n- and p-type InGaN alloys

, 2008
King, PDC, T. D. Veal, H. J. Lü, Jefferson, PH, Samual Hatfield, W. J. Schaff, C. F. McConville   +6 more
openalex   +1 more source

InGaN/GaN light-emitting diodes : from modeling to their hybrid applications with novel nanomaterials [PDF]

, 2017
Namig Hasanov
openalex   +1 more source

Strong Lateral Mode Confinement by Embedding SiO₂ Nanospheres in the DBRs of GaN-Based VCSELs. [PDF]

Micromachines (Basel)
Chen H, Lei M, Meng L, Chu Z, Chen W, Hu X.   +5 more
europepmc   +1 more source

High-efficiency HTL-free i-n versus p-i-n InGaN single junction solar cells: A SCAPS-1D optimization study

Peverga R. Jubu, Suleman Kazim Omotayo, Emeka E. Oguzie, Tordue Imbur, Mohd Zamir Pakhuruddin   +4 more
openalex   +1 more source

Wafer-Level Transfer of GaN-on-Si Light-Emitting Devices via SiO₂-SiO₂ Direct Bonding: Strain Evolution and Optoelectronic Performance. [PDF]

Micromachines (Basel)
Zhang S, Zhang S, Fan Q, Ni X, Gu X.
europepmc   +1 more source