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Wide-gap semiconductor InGaN and InGaAln grown by MOVPE
Journal of Electronic Materials, 1992A Katsui
exaly
InGaN: An overview of the growth kinetics, physical properties and emission mechanisms
Superlattices and Microstructures, 2008F K Yam, Z Hassan
exaly
Growth and characterisation of InGaN/GaN and InGaN/InGaN MQWs emitting at 540 nm
2005Kappers, M. J. +12 more
openaire +1 more source

