Results 251 to 260 of about 35,399 (274)

Full InGaN red (625 nm) micro-LED (10 μm) demonstration on a relaxed pseudo-substrate

, 2021
A. Dussaigne, P. Le Maitre, H. Haas, J. Pillet, F. Barbier, A. Grenier, N. Michit, Audrey Jannaud, R. Templier, D. Vaufrey, F. Rol, O. Ledoux, D. Sotta   +12 more
semanticscholar   +1 more source

Kinetics of indium adlayer and droplet on InGaN surface and their roles in InGaN growth

Applied Physics Letters
The presence of a bilayer of metal atoms on the growth front is critical for achieving high-quality III-nitride growth via molecular beam epitaxy. To investigate the kinetics of bilayer indium (In) atoms on the (In)GaN surface, we conducted real-time monitoring of In adsorption and desorption processes using in situ laser reflection and reflected high ...
Pengfei Shao, Yu Liu, Qi Yao, Dawei Liu, Lei Cao, Qing Cai, Tsung-Tse Lin, Tomohiro Yamaguchi, Tsutomu Araki, Bin Liu, Rong Zhang, Yasushi Nanishi, Ke Wang   +12 more
openaire   +1 more source

InGaN

1997
Shuji Nakamura, Gerhard Fasol
openaire   +1 more source

InGaN

2000
Shuji Nakamura, Stephen Pearton, Gerhard Fasol   +2 more
openaire   +1 more source

???????????????????????????? ?????????????????????????? InGaN, ???????????????????? ?? ?????????? ???????????????? ???????????? ???????????????? ???? Si

2015
???????????????????? ?? ???????????????????? ?????????? ???????????????????????? ?????????????????????????????? ???????????? ?????? ?? ???????????????????? ??????????????-???????????????? ???????????????????? ?? ?????????????????? ?????????????????? ???????????????? ?????????? ?????? ?????????????? ?????????????????????? ?????????????? Al/n-Si. ????????
openaire   +1 more source

Highly Efficient InGaN Nanorods Photoelectrode by Constructing Z‐scheme Charge Transfer System for Unbiased Water Splitting

Small, 2021
Zhijie Zhang, Jixing Chai, Ben Cao
exaly  

Significant Quantum Efficiency Enhancement of InGaN Red Micro-Light-Emitting Diodes with a Peak External Quantum Efficiency of up to 6%

ACS Photonics, 2023
Panpan Li, Hongjian Li, Norleakvisoth Lim   +2 more
exaly  

Theoretical analysis of the optical spectra of InGaN quantum dots in InGaN layers

2000
A theoretical investigation of the optical properties of In_xGa_{1-x}N quantum dots in In_{y}Ga_{1-y}N layers is presented. We compute the single-particle energies and wave functions for different dot dimension and indium composition in the alloys, and use them to predict optical properties.
HOHENESTER U., DI FELICE R., MOLINARI E., ROSSI, FAUSTO   +3 more
openaire   +1 more source

A Multilevel Intermediate‐Band Solar Cell by InGaN/GaN Quantum Dots with a Strain‐Modulated Structure

Advanced Materials, 2014
Liwen Sang, Meiyong Liao, Qifeng Liang   +2 more
exaly  

Photoelectrochemical hydrogen generation using graded In-content InGaN photoelectrode structures

Nano Energy, 2019
Kazuhiro Ohkawa, Martin Velazquez-Rizo, Daisuke Iida   +2 more
exaly