Results 231 to 240 of about 35,399 (274)

Highly Efficient InGaN Nanorods Photoelectrode by Constructing Z-scheme Charge Transfer System for Unbiased Water Splitting.

Small, 2020
Unbiased photoelectrochemical water splitting for the promising InGaN nanorods photoelectrode is highly desirable, but it is practically hindered by the serious recombination of charge carrier in bulk and surface of InGaN nanorods.
Jing Lin, Zhijie Zhang, Jixing Chai, B. Cao, Ximing Deng, Wenliang Wang, Xingjiang Liu, Guoqiang Li   +7 more
semanticscholar   +1 more source

Microcomposition and Luminescence of InGaN Emitters

physica status solidi (a), 2002
Using wavelength dispersive X-ray (WDX) spectrometers on an electron probe micro-analyser (EPMA) the indium content of a number of homogeneous and inhomogeneous InGaN epitaxial layers has been accurately mapped. The addition of a spectrometer and silicon CCD array to the light microscope, which shares the same focus as the electron microscope, enables ...
Martin, R.W., Edwards, P.R., O'Donnell, K.P., Mackay, E.G., Watson, I.M.   +4 more
openaire   +2 more sources

Efficient InGaN-based yellow-light-emitting diodes

Photonics Research, 2019
Realization of efficient yellow-light-emitting diodes (LEDs) has always been a challenge in solid-state lighting. Great effort has been made, but only slight advancements have occurred in the past few decades.
F. Jiang, Jianli Zhang, Xue Longquan, Jie Ding, Guangxu Wang, Wu Xiaoming, Xiaolan Wang, Chunlan Mo, Z. Quan, Guo Xing, Chang-da Zheng, Shuan Pan, Junlin Liu   +12 more
semanticscholar   +1 more source

Reduction of efficiency droop in green strain-compensated InGaN/InGaN light-emitting diodes grown on InGaN substrate

Japanese Journal of Applied Physics, 2015
The efficiency droop characteristics of green strain-compensated InGaN/InGaN light-emitting diodes (LEDs) grown on an InGaN substrate are investigated by using the multi-band effective mass theory and drift-diffusion model. The radiative recombination coefficient Beff of the strain-compensated quantum well (QW) structure is shown to be much larger than
Seoung-Hwan Park, Tae-Hoon Chung, Jong Hyeob Baek, Doyeol Ahn   +3 more
openaire   +1 more source

Growth mechanism of InGaN nano-umbrellas

Nanotechnology, 2016
It is demonstrated that growing InGaN nanowires in metal-rich conditions on top of GaN nanowires results in a widening of the InGaN section. It is shown that the widening is eased by stacking faults (SFs) formation, revealing facets favorable to In incorporation.
Zhang, Xin, Haas, Benedikt, Rouviere, Jean-Luc, Robin, Eric, Daudin, Bruno   +4 more
openaire   +4 more sources

Effect of graded InGaN drain region and ’In’ fraction in InGaN channel on performances of InGaN tunnel field-effect transistor

Superlattices and Microstructures, 2017
Abstract An InGaN-based graded drain region tunnel field-effect transistor (GD-TFET) is proposed to suppress the ambipolar behavior. The simulation results with the trade-off between on-state current (Ion) and ambipolar current (Iambipolar) show decreased Iambipolar (1.9 × 10−14 A/μm) in comparison with that of conventional TFETs (2.0 × 10−8 A/μm ...
Xiaoling Duan, Jincheng Zhang, Shulong Wang, Rudai Quan, Yue Hao   +4 more
openaire   +1 more source

InGaN quantum dot formation mechanism on hexagonal GaN/InGaN/GaN pyramids

Nanotechnology, 2012
Growing InGaN quantum dots (QDs) at the apex of hexagonal GaN pyramids is an elegant approach to achieve a deterministic positioning of QDs. Despite similar synthesis procedures by metal organic chemical vapor deposition, the optical properties of the QDs reported in the literature vary drastically.
A, Lundskog, J, Palisaitis, C W, Hsu, M, Eriksson, K F, Karlsson, L, Hultman, P O Å, Persson, U, Forsberg, P O, Holtz, E, Janzén   +9 more
openaire   +2 more sources

Light-driven synthesis of C_2H_6 from CO_2 and H_2O on a bimetallic AuIr composite supported on InGaN nanowires

Nature Catalysis, 2023
Baowen Zhou, Yongjin Ma, Pengfei Ou, Zhengwei Ye, Xiaoyan Li, S. Vanka, Tengyu Ma, Haiding Sun, Ping Wang, Peng Zhou, Jason K. Cooper, Yixin Xiao, I. Navid, Jun Pan, Jun Song, Z. Mi   +15 more
semanticscholar   +1 more source

Gain and laser characteristics of InGaN quantum wells on ternary InGaN substrates

IEEE Photonics Conference 2012, 2012
Optical gain properties of InGaN quantum wells on ternary substrates are analyzed for visible lasers. Larger optical gains are obtained by employing ternary substrates, which indicate its potential for green-emitting diode lasers.
Jing Zhang, Nelson Tansu
openaire   +1 more source

Advantages of InGaN light-emitting diodes with GaN-InGaN-GaN barriers

Applied Physics Letters, 2011
The advantages of InGaN light-emitting diodes with GaN-InGaN-GaN barriers are studied. The energy band diagrams, carrier concentrations in the quantum wells, radiative recombination rate in the active region, light-current performance curves, and internal quantum efficiency are investigated.
Yen-Kuang Kuo, Tsun-Hsin Wang, Jih-Yuan Chang, Miao-Chan Tsai   +3 more
openaire   +1 more source