Results 221 to 230 of about 35,399 (274)

Suppressed optical field and electron leakage and enhanced hole injection in InGaN laser diodes with InGaN–GaN–InGaN barriers

Journal of Applied Physics, 2021
In this study, an InGaN laser diode (LD) with InGaN–GaN–InGaN quantum barriers was proposed and studied systematically. The energy band diagrams, stimulated recombination rate, optical field distribution, current distribution near the active region, and power–current–voltage performance curves were investigated.
Liwen Cheng, Jiayi Zhang, Jundi Wang, Jun Zhang, Jinpeng Yang, Shudong Wu, Qinyu Qian, Haitao Chen   +7 more
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Efficient emission of InGaN-based light-emitting diodes: toward orange and red

, 2020
Indium gallium nitride (InGaN)-based light-emitting diodes (LEDs) are considered a promising candidate for red-green-blue (RGB) micro displays. Currently, the blue and green LEDs are efficient, while the red ones are inefficient for such applications ...
Shenmin Zhang, Jianli Zhang, Jiangdong Gao, Xiaolan Wang, Chang-da Zheng, Meng Zhang, Xiaoming Wu, Long Xu, Jie Ding, Z. Quan, F. Jiang   +10 more
semanticscholar   +1 more source

InGaN/GaN nanorod and nanosheet arrays for InGaN-based LEDs

IEEE Photonic Society 24th Annual Meeting, 2011
GaN nanorods have drawn attention as possible crystalline structures on which to form InGaN active regions for LEDs, making use of the m-planes that form the sidewalls of the rods. In this paper, we describe such nanorods as well as nanosheets with increased m-plane surface area formed on c-plane sapphire.
Ting-Wei Yeh, P. Daniel Dapkus, Yen-Ting Lin, Lawrence Stewart, Byungmin Ahn, Steven Nutt   +5 more
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Modulating Surface/Interface Structure of Emerging InGaN Nanowires for Efficient Photoelectrochemical Water Splitting

Advanced Functional Materials, 2020
Photoelectrochemical (PEC) water splitting provides a promising approach to convert solar energy into hydrogen. Developing active, stable, and cost‐effective semiconductors photoelectrodes is of great significance for achieving high‐efficiency and large ...
Jing Lin, Wenliang Wang, Guoqiang Li
semanticscholar   +1 more source

Enhanced optical properties of InGaN MQWs with InGaN underlying layers

Journal of Crystal Growth, 2006
The influence of an InGaN underlying layer under InGaN multiquantum wells (MQWs) on the optical properties was investigated. Two MQW structures with and without underlying layers were prepared by MOCVD on sapphire substrates. Optical properties were characterized by means of temperature-dependent photoluminescence (PL), PL excitation (PLE), space ...
Son, JK, Lee, SN, Sakong, T, Paek, HS, Nam, O, Park, Y, Hwang, JS, Kim, JY, Cho, YH Cho, Yong-Hoon   +8 more
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Growth of InGaN and double heterojunction structure with InGaN back barrier

Journal of Semiconductors, 2010
We study the growth of an InGaN and AlGaN/GaN/InGaN/GaN double heterojunction structure by metal organic chemical vapor deposition (MOCVD). It is found that the crystal quality of the InGaN back barrier layer significantly affects the electronic property of the AlGaN/GaN/InGaN/GaN double heterojunction. A high crystal quality InGaN layer is obtained by
Linyu Shi, Jincheng Zhang, Hao Wang, Junshuai Xue, Xinxiu Ou, Xiaofan Fu, Ke Chen, Yue Hao   +7 more
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Demonstration of ultra-small (<10 μm) 632 nm red InGaN micro-LEDs with useful on-wafer external quantum efficiency (>0.2%) for mini-displays

Applied Physics Express, 2020
Ultra-small red micro-LEDs (
S. Pasayat, C. Gupta, M. Wong, Ryan T. Ley, M. Gordon, S. Denbaars, S. Nakamura, S. Keller, U. Mishra   +8 more
semanticscholar   +1 more source

Anc. franç. casigan, -ingan, gasigan, -ingan

Romania, 1906
Thomas A. Anc. franç. casigan, -ingan, gasigan, -ingan. In: Romania, tome 35 n°140, 1906. pp. 598-601.
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Growth and properties of InN, InGaN, and InN/InGaN quantum wells

physica status solidi (a), 2006
AbstractThis paper describes our recent progress on InN, In‐rich InxGa1–xN, and InN/InxGa1–xN quantum wells (QWs) grown by radio‐frequency plasma‐assisted molecular‐beam epitaxy. Among the essential growth sequences to obtain high‐quality InN, the nitridation process of (0001) sapphire substrates was reexamined.
H. Naoi, M. Kurouchi, D. Muto, S. Takado, T. Araki, T. Miyajima, H. Na, and Y. Nanishi   +7 more
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Light emission characteristics of blue strain-compensated InGaN/InGaN/InGaN light-emitting diodes

Journal of the Korean Physical Society, 2015
The light emission characteristics of blue strain-compensated InGaN/InGaN light emitting diodes (LEDs) grown on InGaN substrates were investigated using the multiband effective mass theory. The radiative recombination rate of the strain-compensated LED structure is shown to be larger than that of the conventional LED structure due to the decrease in ...
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