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Growth of InGaN and InGaN/InGaN quantum wells by plasma-assisted molecular beam epitaxy
Journal of Crystal Growth, 2008In this work, we report on the growth of InGaN layers and InGaN/InGaN multi-quantum wells (MQWs) grown by plasma-assisted molecular beam epitaxy (PAMBE). We show that the incorporation of indium in InGaN layers can be controlled either by the ratio of Ga to N flux or the growth temperature.
M. Siekacz +10 more
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Applied Physics A, 2014
The effects of InGaN light-emitting diodes (LEDs) with InGaN and composition-graded InGaN interlayers in the space of multiple quantum wells and electron blocking layer are studied numerically. The electrostatic field, energy band diagrams, carrier concentrations, light–current–voltage performances, and internal quantum efficiency (IQE) are ...
Yu-Jue Yang, Yi-Ping Zeng
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The effects of InGaN light-emitting diodes (LEDs) with InGaN and composition-graded InGaN interlayers in the space of multiple quantum wells and electron blocking layer are studied numerically. The electrostatic field, energy band diagrams, carrier concentrations, light–current–voltage performances, and internal quantum efficiency (IQE) are ...
Yu-Jue Yang, Yi-Ping Zeng
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Spontaneous emission rate of green strain‐compensated InGaN/InGaN LEDs using InGaN substrate
physica status solidi (a), 2010AbstractOptical properties of strain‐compensated InGaN/InGaN quantum well (QW) structures using a InGaN substrate are investigated using the multiband effective mass theory. These results are compared with those of conventional InGaN/GaN QW structures using a GaN substrate.
Seoung‐Hwan Park +5 more
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Demonstration of relaxed InGaN-based red LEDs grown with high active region temperature
Applied Physics Express, 2021Red LEDs were grown by metalorganic chemical vapor deposition with a high active region temperature of 870 °C on a relaxed InGaN/GaN superlattice buffer.
Philip Chan +6 more
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High conversion and quantum efficiency indium-rich p-InGaN/p-InGaN/n-InGaN solar cell
Physica B: Condensed Matter, 2021Abstract In this paper, an efficient three-layered p-In0.6Ga0.6N/p-In0.7Ga0.7N/n-In0.7Ga0.7N (PPN) solar cell was designed. The characteristics of the PPN-junction InGaN solar cell were simulated using the SCAPS-1D software. The effects of the thickness and carrier density of the PPN layer on solar cell performance were evaluated.
H.U. Manzoor +4 more
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2DEG transport properties over temperature for AlGaN/GaN HEMT and AlGaN/InGaN/GaN pHEMT
, 2021For the commercial implementation of GaN-based high electron mobility transistor (HEMT) and GaN-based pseudomorphic HEMT (pHEMT), the temperature dependency of the two-dimensional electron gas (2DEG) is crucial. Herein, the temperature dependency of 2DEG
Md. Abdul Kaium Khan +2 more
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AlGaN/GaN/InGaN/GaN HEMTs with an InGaN‐notch
physica status solidi c, 2006AbstractWe report an AlGaN/GaN/InGaN/GaN double heterojunction HEMT (DH‐HEMT) with reduced buffer leakage and high‐mobility two‐dimensional‐electron‐gas (2DEG). A 3‐nm thin InxGa1–xN (x = 0.1) layer was inserted into the conventional AlGaN/GaN HEMT structure. A 2DEG mobility of around 1300 cm2/Vs and a sheet resistance of 480 Ω/sq were obtained at room
J. Liu +4 more
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True‐Red InGaN Light‐Emitting Diodes for Display Applications
Physica Status Solidi (a)Red InGaN has attracted much attention recently for micro‐light‐emitting diode (microLED) display applications. However, the consequences of spectral broadening are often overlooked and many of the published spectra do not meet display gamut requirements.
Robert A. Armitage +3 more
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Growth of highly relaxed InGaN pseudo-substrates over full 2-in. wafers
Applied Physics Letters, 2021A highly relaxed InGaN buffer layer was demonstrated over a full two-inch c-plane sapphire substrate by metalorganic chemical vapor deposition. The InGaN buffer layer was grown on a 100 nm GaN decomposition stop layer with a 3 nm thick high indium ...
Philip Chan, S. Denbaars, S. Nakamura
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Semiconductor Science and Technology, 2015
A new structure with InGaN/AlInN/InGaN composition-graded barriers for a nitride-based light-emitting diode (LED) has been proposed and analyzed numerically. The energy band diagrams, the electrostatic fields, the carrier concentrations in the quantum well, the light output power and the internal quantum efficiency are investigated.
Yang Liu +10 more
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A new structure with InGaN/AlInN/InGaN composition-graded barriers for a nitride-based light-emitting diode (LED) has been proposed and analyzed numerically. The energy band diagrams, the electrostatic fields, the carrier concentrations in the quantum well, the light output power and the internal quantum efficiency are investigated.
Yang Liu +10 more
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