Results 201 to 210 of about 35,399 (274)
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Applied Physics Letters, 2022
We present efficient red InGaN 60 × 60 μm2 micro-light-emitting diodes ( μLEDs) with an epitaxial tunnel junction (TJ) contact. The TJ was grown by metal-organic chemical vapor deposition using selective area growth.
Panpan Li +10 more
semanticscholar +1 more source
We present efficient red InGaN 60 × 60 μm2 micro-light-emitting diodes ( μLEDs) with an epitaxial tunnel junction (TJ) contact. The TJ was grown by metal-organic chemical vapor deposition using selective area growth.
Panpan Li +10 more
semanticscholar +1 more source
Nano Energy, 2021
We study Ⅲ-nitride nanowire (NW) anti-reflection structures employed as photoelectrocatalyst for solar water splitting. We found that 1D vertical InGaN NW arrays tilted by 73° exhibit maximized photocurrent.
Hedong Chen, Huapeng Ye, Guofu Zhou
exaly +2 more sources
We study Ⅲ-nitride nanowire (NW) anti-reflection structures employed as photoelectrocatalyst for solar water splitting. We found that 1D vertical InGaN NW arrays tilted by 73° exhibit maximized photocurrent.
Hedong Chen, Huapeng Ye, Guofu Zhou
exaly +2 more sources
Application of DERI method to InN/InGaN MQW, thick InGaN and InGaN/InGaN MQW structure growth
SPIE Proceedings, 2013ABSTRACT We proposed recently a new RF-MBE met hod called droplet elimina tion by radical-beam irradi ation (DERI) for growing high-quality InN-based III-nitride films. DERI consists of two growth processes: a metal-rich growth process (MRGP) and a droplet elimination process (DEP).
T. Yamaguchi +5 more
openaire +1 more source
, 2020
There is growing interest in microLED devices with lateral dimensions between 1 and 10 μm. However, reductions in external quantum efficiency (EQE) due to increased nonradiative recombination at the surface become an issue at these sizes.
Jordan M. Smith +9 more
semanticscholar +1 more source
There is growing interest in microLED devices with lateral dimensions between 1 and 10 μm. However, reductions in external quantum efficiency (EQE) due to increased nonradiative recombination at the surface become an issue at these sizes.
Jordan M. Smith +9 more
semanticscholar +1 more source
, 2020
Epitaxially grown high crystalline quality InGaN/AlGaN multiple quantum structures on patterned sapphire with silica array (PSSA) have been successfully demonstrated. In comparison to conventional epilayers grown on patterned sapphire substrate (PSS), we
Hongpo Hu +8 more
semanticscholar +1 more source
Epitaxially grown high crystalline quality InGaN/AlGaN multiple quantum structures on patterned sapphire with silica array (PSSA) have been successfully demonstrated. In comparison to conventional epilayers grown on patterned sapphire substrate (PSS), we
Hongpo Hu +8 more
semanticscholar +1 more source
Green InGaN Quantum Dots Breaking through Efficiency and Bandwidth Bottlenecks of Micro‐LEDs
Laser & Photonics reviews, 2021Micro‐LEDs are regarded as ideal light sources for next‐generation display and high‐speed visible‐light communication (VLC). However, the conventional micro‐LEDs based on InGaN quantum well (QW) active region suffer from a low efficiency under small ...
Lei Wang +12 more
semanticscholar +1 more source
Advantages of blue InGaN light-emitting diodes with InGaN-AlGaN-InGaN barriers
Applied Physics Letters, 2012Efficiency enhancement of the blue InGaN light-emitting diodes (LEDs) with InGaN-AlGaN-InGaN barriers is studied numerically. The energy band diagrams, carrier concentrations in quantum wells, radiative recombination rate in active region, light-current performance curves, and internal quantum efficiency are investigated. The simulation results suggest
Yen-Kuang Kuo +2 more
openaire +1 more source
Chemical Engineering Journal, 2021
To boost photoelectrocatalytic water splitting, we synthesize InGaN nanowires (NWs) on pyramid textured Si (1 0 0) substrates (InGaN/PSi) by plasma-assisted molecular beam epitaxy which act as a novel anti-reflection 3D nano-grating light trapping ...
Hedong Chen, Huapeng Ye, Hongjie Yin
exaly +2 more sources
To boost photoelectrocatalytic water splitting, we synthesize InGaN nanowires (NWs) on pyramid textured Si (1 0 0) substrates (InGaN/PSi) by plasma-assisted molecular beam epitaxy which act as a novel anti-reflection 3D nano-grating light trapping ...
Hedong Chen, Huapeng Ye, Hongjie Yin
exaly +2 more sources
Applied Physics Letters, 2021
Red micro-light-emitting diodes (μLEDs) have been generated significant interest for the next generation μLEDs displays. It has been shown that the external quantum efficiency (EQE) of AlInGaP red μLEDs markedly decreases as the size goes to very small ...
Panpan Li +7 more
semanticscholar +1 more source
Red micro-light-emitting diodes (μLEDs) have been generated significant interest for the next generation μLEDs displays. It has been shown that the external quantum efficiency (EQE) of AlInGaP red μLEDs markedly decreases as the size goes to very small ...
Panpan Li +7 more
semanticscholar +1 more source
Eu-doped GaN and InGaN monolithically stacked full-color LEDs with a wide color gamut
Applied Physics Express, 2021High-density micro light-emitting diode (μ-LED) arrays are key to next-generation ultrahigh-resolution displays. As a novel candidate, we report monolithic vertically stacked full-color LEDs consisting of Eu-doped GaN and InGaN quantum wells (QWs ...
S. Ichikawa +6 more
semanticscholar +1 more source