Results 241 to 250 of about 35,399 (274)

InGaN MQW green LEDs using p -InGaN and p -InGaN/ p -GaN superlattices as p -type layers

SPIE Proceedings, 2008
High-efficiency "true" green light-emitting diodes (LEDs) (λ~550nm) are one of the key elements in realizing high-brightness RGB-based white-lighting systems. Because the InGaN multiple quantum wells (MQWs) in the active regions of green LEDs contain a high indium alloy composition and a corresponding large lattice mismatch, the QW has a reduced ...
Russell D. Dupuis, Jae B. Limb, Jianping Liu, Jae-Hyun Ryou, Clarissa Horne, Dongwon Yoo   +5 more
openaire   +1 more source

Piezo-phototronic effect in InGaN/GaN semi-floating micro-disk LED arrays

, 2020
With enhanced light output efficiencies, InGaN/GaN micro-disk LED has received intensive attentions recently. Combining isotropic and anisotropic dry etching processes, an innovative semi-floating InGaN/GaN micro-disk LED array is fabricated, which shows
Ting Liu, Ding Li, Hai Hu, Xin Huang, Zhen-fu Zhao, W. Sha, Chunyan Jiang, Chunhua Du, Mengmeng Liu, Xiong Pu, B. Ma, Weiguo Hu, Zhong Lin Wang   +12 more
semanticscholar   +1 more source

2DEG properties in InGaN/InN/InGaN‐based double channel HEMTs

physica status solidi c, 2010
AbstractThis paper describes the 2DEG properties of InGaN/InN/InGaN double channel high electron mobility transistor (DHEMT). These include an in‐depth theoretical investigation of 2DEG sheet carrier concentration and mobility. The 2DEG mobility is calculated using ensemble Monte Carlo taking into account all relevant scatterings.
Md. Tanvir Hasan, Md. Rejvi Kaysir, Md. Sherajul Islam, Ashraful G. Bhuiyan, Md. Rafiqul Islam, A. Hashimoto, A. Yamamoto   +6 more
openaire   +1 more source

Effects of chirped barrier thickness on InGaN/GaN and InGaN/InGaN MQW LEDs

Indian Journal of Physics, 2023
Indrani Mazumder, Kashish Sapra, Avinash Paliwal, Ashok Chauhan, Manish Mathew, Kuldip Singh   +5 more
openaire   +1 more source

InGaN quantum well with gradually varying indium content for high-efficiency GaN-based green light-emitting diodes.

Optics Letters, 2022
Shengjun Zhou, Zehong Wan, Y. Lei, Bin Tang, Guoyi Tao, Peng Du, Xiaoyu Zhao   +6 more
semanticscholar   +1 more source

Enhanced performance of InGaN light‐emitting diodes with InGaN/GaN superlattice and graded‐composition InGaN/GaN superlattice interlayers

physica status solidi (a), 2014
The advantages of InGaN‐based light‐emitting diodes (LEDs) with InGaN/GaN supperlattice (SL) and graded‐composition InGaN/GaN SL interlayers in the last‐barrier/EBL space are studied numerically. The electrostatic field, energy band diagrams, carrier concentrations, radiative recombination rate, light–current–voltage (L–I–V) performances, and internal ...
Yujue Yang, Yiping Zeng
openaire   +1 more source

Growth and characterization of InGaN nanodots hybrid with InGaN/GaN quantum wells

Applied Physics A, 2012
Uniform InGaN nanodots were successfully grown on SiO2 pretreated GaN surface. It was found that the InGaN nanodots were 20 nm in diameter and 5 nm in height, approximately. After the growth of two peri- ods of InGaN/GaN quantum wells on the surface of In- GaN nanodots, nanodot structure still formed in the In- GaN well layer caused by the enhanced ...
G. F. Yang, P. Chen, Z. G. Yu, B. Liu, Z. L. Xie, X. Q. Xiu, Z. L. Wu, F. Xu, Z. Xu, X. M. Hua, P. Han, Y. Shi, R. Zhang, Y. D. Zheng   +13 more
openaire   +1 more source

Effects of an InGaN prelayer on the properties of InGaN/GaN quantum well structures

physica status solidi c, 2014
AbstractIn this paper we report on the effects of including of an InGaN prelayer in an InGaN/GaN multiple quantum well (MQW) structure. Two equivalent 10 period In0.16Ga0.84N MQW structures were studied, one with a 24 nm thick In0.05Ga0.95N prelayer, one without.
Davies, M. J., Massabuau, F. C.-P., Dawson, P., Oliver, R. A., Kappers, M. J., Humphreys, C. J.   +5 more
openaire   +2 more sources

Improved artificial photosynthesis with InGaN NCs/InGaN/GaN electrodes

Functional Materials Letters
InGaN is a promising photocatalytic material for photocatalytic reduction of carbon dioxide with excellent optical properties and tunable bandwidth between 0.7 and 3.4 eV. However, there are few studies on the effect of InGaN morphology on the photocatalytic reduction of CO2.
Mingxia Di, Hui Zhang, Nan Gao, Xinjian Xie, Lifeng Bian, Yulong Fang, Guifeng Chen   +6 more
openaire   +1 more source

Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes

, 1994
S. Nakamura, T. Mukai, M. Senoh
semanticscholar   +1 more source