Research Progress on Insulated Gate Bipolar Transistor (IGBT) Modules [PDF]
MicromachinesWith the rapid advancement of social productivity and technological innovation, the insulated gate bipolar transistor (IGBT) has emerged as a cornerstone in modern power electronic devices [...]
Peisheng Liu, Yaohui Deng
doaj +6 more sources
Simulation Study on 6.5 kV SiC Trench Gate p-Channel Superjunction Insulated Gate Bipolar Transistor [PDF]
MicromachinesThis paper investigates 6.5 kV SiC trench gate p-channel IGBTs using Sentaurus TCAD simulations. The proposed superjunction structure is compared to conventional designs to highlight its advantages.
Kuan-Min Kang +2 more
doaj +4 more sources
Digital-Twin-Driven Intelligent Insulated-Gate Bipolar Transistor Production Lines [PDF]
SensorsWith the rapid development of novel energy vehicles, power generation, photovoltaics, and other industries, power electronic devices have gained considerable attention.
Xiao Zhang +6 more
doaj +4 more sources
INSULATED-GATE BIPOLAR TRANSISTOR
Chronos, 2022 Insulated-gate bipolar transistor is a cunningly composed hybrid of field-effect and bipolar transistors. At the same time, it has adopted the main advantages of the two main types of transistors and has found wide application in high-power and high-voltage devices.
Tilegen Abaiuly Kapen
openaire +2 more sources
On-Line Measurement of Chip Temperature Based on Blocking Leakage Current of the Insulated-Gate Bipolar Transistor Module in the High-Temperature Reverse-Bias Test [PDF]
IEEE Access, 2021 In high-temperature reverse-bias test of an insulated-gate bipolar transistor module, the problem of self-heating in chip resulting from power loss arises with high frequency.
Jinyuan Li +5 more
doaj +2 more sources
Integrated Rogowski Coil Sensor for Press-Pack Insulated Gate Bipolar Transistor Chips [PDF]
Sensors, 2020 Recently, the press-pack insulated gate bipolar transistor (IGBT) has usually been used in direct current (DC) transmission. The press-pack IGBT (PPI) adopts a parallel layout of boss chips, and the currents of each chip will be uneven in the process of ...
Chaoqun Jiao +3 more
doaj +2 more sources
Development of 8-inch Key Processes for Insulated-Gate Bipolar Transistor
Engineering, 2015 Based on the construction of the 8-inch fabrication line, advanced process technology of 8-inch wafer, as well as the fourth-generation high-voltage double-diffused metal-oxide semiconductor (DMOS+) insulated-gate bipolar transistor (IGBT) technology and
Guoyou Liu, Rongjun Ding, Haihui Luo
doaj +2 more sources
Effect of solder layer crack on the thermal reliability of Insulated Gate Bipolar Transistors
Case Studies in Thermal Engineering, 2019 In order to study the thermal reliability of solder layer fatigue damage in Insulated Gate Bipolar Transistors (IGBT), the Finite Element Analysis (FEA) of the crack damage of the solder layer is described.
Mingxing Du +4 more
doaj +2 more sources
Four Hybrid Gates SOI Lateral Insulated Gate Bipolar Transistor With Improved Carrier Controllability [PDF]
IEEE Journal of the Electron Devices Society, 2023 Easy inter-connection is a crucial advantage of the single-chip power ICs, which makes power devices with multiple ports easy to improve carrier controllability without increasing process difficulty.
Jie Ma +8 more
doaj +2 more sources
IGBT Overcurrent Capabilities in Resonant Circuits [PDF]
SensorsThe control of IGBT (insulated gate bipolar transistor) and MOSFET (metal oxide semiconductor field effect transistor) is of great interest nowadays as they are widely used in electric vehicles, photovoltaic applications, and a multitude of systems.
Basil Mohammed Al-Hadithi +1 more
doaj +2 more sources